Structural body and manufacturing method thereof
View Patent ↗The present invention includes a substrate structural body having a high electrostatic chuck force at a low voltage even when an insulated board is used, and a method for manufacturing the substrate structural body. As the substrate structural body, there is provided a substrate structural body for attaining its fixing by an electrostatic chuck mechanism, comprising at least a first polycrystalline silicon film formed on the back surface of a substrate comprised of an insulating material or its back and side surfaces, wherein a top layer of part of the back surface or the back and side surfaces is of a first silicon insulating film.
1. A substrate structural body for use with an electrostatic chuck mechanism, comprising:
a polycrystalline silicon film formed over a bottom surface and a peripheral side surface of a substrate, the substrate comprising at least one of a semiconductor material and an insulating material; and
a silicon insulating film formed over the polycrystalline silicon film, where at least a portion of a peripheral side surface of the polycrystalline silicon film formed over the peripheral side surface of the substrate is not covered by the silicon insulating film.
2. The substrate structural body of claim 1 , wherein the polycrystalline silicon film is doped with an impurity.
3. The substrate structural body of claim 2 , further comprising an additional polycrystalline silicon film and an additional silicon insulating film provided between the polycrystalline silicon film and the silicon insulating film.
4. The substrate structural body of claim 1 , further comprising an additional polycrystalline silicon film and an additional silicon insulating film provided between the polycrystalline silicon film and the silicon insulating film.
5. The substrate structural body of claim 1 , wherein:
the periphery of the substrate includes a chamfered portion; and
the portion of the polycrystalline silicon film over the periphery not covered by the silicon insulating film includes the chamfered portion.
6. The substrate structural body of claim 2 , wherein:
the periphery of the substrate includes a chamfered portion; and
the portion of the polycrystalline silicon film over the periphery not covered by the silicon insulating film includes the chamfered portion.
7. The substrate structural body of claim 3 , wherein:
the periphery of the substrate includes a chamfered portion; and
the portion of the polycrystalline silicon film over the periphery not covered by the silicon insulating film includes the chamfered portion.
8. The substrate structural body of claim 1 , wherein the substrate comprises at least one of a ceramics and a heat resistant organic substance.
9. The substrate structural body of claim 2 , wherein the substrate comprises at least one of a ceramics and a heat resistant organic substance.
10. The substrate structural body of claim 3 , wherein the substrate comprises at least one of a ceramics and a heat resistant organic substance.
11. The substrate structural body of claim 5 , wherein the substrate comprises at least one of a ceramics and a heat resistant organic substance.
12. The substrate structural body according to claim 5 , wherein the substrate is a ceramic and the ceramic includes quartz.