Semiconductor material for radiation absorption and detection
View Patent ↗A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M 1 2+ , M 2 2+ , M 3 2+ , . . . )(G 1 V , G 2 V , G 3 V , . . . ) and exhibiting an antifluorite-type order, where Li=1, (M 1 2+ +M 2 2+ +M 3 2+ + . . . )=1, and (G 1 V +G 2 V +G 3 V + . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6 Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.
1. A semiconductor material for radiation absorption and detection comprising a ternary composition of stoichiometry LiM 2+ G V and exhibiting an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M 2+ +=1, and G V =1, wherein M 2+ is selected from the group consisting of Be, Mg, Ca, Sr, Ba, V, Cr, Mn, Fe, Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Cd, Hg, Sn, and Pb, and wherein G V is selected from the group consisting of N, P, As, Sb, and Bi, and wherein Li consists of 6 Li, and wherein an electron-hole pair is created by absorption of radiation, and wherein the electron-hole pair is detected by generating a current pulse.
2. The material according to claim 1 , wherein M 2+ and G V both have a thermal neutron cross-section of less than 0.1 barn.
3. The material according to claim 1 , wherein the material absorbs neutrons for generating electrical energy.
4. The material according to claim 1 , wherein the material is doped with an element that serves as an acceptor or donor for Li, M 2+ or G V , thereby creating a p-type or n-type semiconductor.
5. The material according to claim 4 , wherein the element that serves as an acceptor or donor is selected from the group consisting of Li, Na, K, Rb, Be, Mg, Cu, Ag, Au, B, Al, Ga, In, Sc, Y, C, Si, Ge, Sn, O, S, Se, and Te.
6. A semiconductor material for radiation absorption and detection comprising a mixed composition of stoichiometry Li(M 1 2+ , M 2 2+ , M 3 2+ , . . . ) (G 1 V , G 2 V , G 3 V , . . . ) and exhibiting an antifluorite-type ordering, where the stoichiometric fractions are Li=1, (M 1 2+ +M 2 2+ +M 3 2+ + . . . )=1, and (G 1 V +G 2 V +G 3 V + . . . )=1, wherein (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) is selected from the group consisting of Be, Mg, Ca, Sr, Ba, V, Cr, Mn, Fe, Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Cd, Hg, Sn, and Pb, and combinations thereof, and wherein (G 1 V , G 2 V , G 3 V , . . . ) is selected from the group consisting of N, P, As, Sb, Bi, and combinations thereof, and wherein Li consists of 6 Li, and wherein an electron-hole pair is created by absorption of radiation, and wherein the electron-hole pair is detected by generating a current pulse.
7. The material according to claim 6 , wherein (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) and (G 1 V , G 2 V , G 3 V , . . . ) both have a thermal neutron cross-section of less than 0.1 barn.
8. The material according to claim 6 , wherein the material absorbs neutrons for generating electrical energy.
9. The material according to claim 6 , wherein the material is doped with an element that serves as an acceptor or donor for Li, (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) or (G 1 V , G 2 V , G 3 V , . . . ), thereby creating a p-type or n-type semiconductor.
10. The material according to claim 9 , wherein the element that serves as an acceptor or donor is selected from the group consisting of Li, Na, K, Rb, Be, Mg, Cu, Ag, Au, B, Al, Ga, In, Sc, Y, C, Si, Ge, Sn, O, S, Se, and Te.
11. A semiconductor material for radiation absorption and detection comprising a ternary composition of stoichiometry LiM 2+ G V and exhibiting an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M 2+ =1, and G V =1, wherein M 2+ is selected from the group consisting of Be, Mg, Ca, Sr, Ba, V, Cr, Mn, Fe, Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Cd, Hg, Sn, and Pb, and wherein G V is selected from the group consisting of N, P, As, Sb, and Bi, and wherein Li consists of 6 Li and 7 Li, and wherein an electron-hole pair is created by absorption of radiation, and wherein the electron-hole pair is detected by generating a current pulse.
12. The material according to claim 11 , wherein M 2+ and G V both have a thermal neutron cross-section of less than 0.1 barn.
13. The material according to claim 11 , wherein the material absorbs both neutrons and photons for generating electrical energy.
14. The material according to claim 11 , wherein the material is doped with an element that serves as an acceptor or donor for Li, M 2+ or G V , thereby creating a p-type or n-type semiconductor.
15. The material according to claim 14 , wherein the element that serves as an acceptor or donor is selected from the group consisting of Li, Na, K, Rb, Be, Mg, Cu, Ag, Au, B, Al, Ga, In, Sc, Y, C, Si, Ge, Sn, O, S, Se, and Te.
16. A semiconductor material for radiation absorption and detection comprising a mixed composition of stoichiometry Li(M 1 2+ , M 2 2+ , M 3 2+ , . . . )(G 1 V , G 2 V , G 3 V , . . . ) and exhibiting an antifluorite-type ordering, where the stoichiometric fractions are Li=1, (M 1 2+ +M 2 2+ 'M 3 2+ + . . . )=1, and (G 1 V +G 2 V +G 3 V + . . . )=1, wherein (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) is selected from the group consisting of Be, Mg, Ca, Sr, Ba, V, Mn, Fe, Ru, Os, Cr, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Cd, Hg, Sn, and Pb, and combinations thereof, and wherein (G 1 V , G 2 V , G 3 V , . . . ) is selected from the group consisting of N, P, As, Sb, Bi, and combinations thereof, and wherein Li consists of 6 Li and 7 Li, and wherein an electron-hole pair is created by absorption of radiation, and wherein the electron-hole pair is detected by generating a current pulse.
17. The material according to claim 16 , wherein (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) and (G 1 V , G 2 V , G 3 V , . . . ) both have a thermal neutron cross-section of less than 0.1 barn.
18. The material according to claim 16 , wherein the material absorbs both neutrons and photons for generating electrical energy.
19. The material according to claim 16 , wherein the material is doped with an element that serves as an acceptor or donor for Li, (M 1 2+ , M 2 2+ , M 3 2+ , . . . ) or (G 1 V , G 2 V , G 3 V , . . . ), thereby creating a p-type or n-type semiconductor.
20. The material according to claim 19 , wherein the element that serves as an acceptor or donor is selected from the group consisting of Li, Na, K, Rb, Be, Mg, Cu, Ag, Au, B, Al, Ga, In, Sc, Y, C, Si, Ge, Sn, O, S, Se, and Te.