Exposure mask, pattern formation method, and exposure mask fabrication method
View Patent ↗An exposure mask has a rectangular pattern, an auxiliary pattern, a translucent region, and a shielding region. The rectangular pattern includes a transparent region having a dimension equal to or greater than a critical resolution of exposure light. The auxiliary pattern is arranged around the rectangular pattern and includes a transparent region having a dimension smaller than the critical resolution. The translucent region is arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the auxiliary pattern to an opposite phase. The shielding region is arranged around the auxiliary pattern.
1. An exposure mask, comprising:
a rectangular pattern including a transparent region having a dimension equal to or greater than a critical resolution of exposure light;
an auxiliary pattern arranged around the rectangular pattern and including a transparent region having a dimension smaller than the critical resolution;
a translucent region arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the octagonal auxiliary pattern to an opposite phase; and
a shielding region arranged around the auxiliary pattern.
2. The exposure mask according to claim 1 , wherein:
the translucent region has a transmittance within a range of 10 to 14%.
3. The exposure mask according to claim 1 , wherein:
the shielding region has a transmittance of 0.1% or less.
4. The exposure mask according to claim 1 , further comprising:
another octagonal auxiliary pattern located in the shielding region and arranged around the auxiliary pattern.
5. A pattern formation method for forming a pattern on a wafer by performing exposure using the exposure mask according to claim 1 , wherein:
the exposure mask is illuminated with exposure light by using an oblique incidence illumination method.
6. The pattern formation method according to claim 5 , wherein:
the exposure light is linearly polarized light.
7. The pattern formation method according to claim 6 , wherein:
the exposure light is obtained from a secondary light source providing orbicular zone illumination, and
a polarization direction of the linearly polarized light is perpendicular to a radial direction of the orbicular zone illumination.
8. An exposure mask fabrication method for fabricating the exposure mask according to claim 1 , comprising:
forming a translucent film and a shielding film on a transparent substrate;
forming the rectangular pattern and the octagonal auxiliary pattern by masking the translucent region and the shielding region to selectively remove the translucent film and the shielding film; and
forming the translucent region by masking the shielding region to selectively remove only the shielding film from the translucent film and the shielding film left unremoved in the translucent region.