Method of fabricating an organic light emitting display device
View Patent ↗An organic light emitting display device and a method of fabricating the same. A dummy pattern is formed in an emission region to increase the step height of the emission region by an electrode material while a thin film transistor is fabricated, so that a distance between a pixel electrode and a donor film is decreased during fabrication of an organic layer. This reduced distance reduces laser energy for transfer using laser-induced thermal imaging, thus improving life span and efficiency of the device. Further, the pixel electrode can extend into a thin film transistor region and a capacitor region, thus enhancing an aperture ratio.
1. A method of fabricating an organic light emitting display device, comprising:
forming first conductive layer patterns on a substrate that is divided into a first region, a second region and a third region, respectively, the first region being an emission region;
forming a first insulating layer on the substrate and on the first conductive layer patterns;
forming second conductive layer patterns that includes a second dummy pattern, a gate electrode and a second electrode of a capacitor on the first insulating layer in the first region, the second region and the third region, respectively, the second dummy pattern being adapted to increase a step height of the emission region;
forming a second insulating layer on an entire surface of the second conductive layer and on exposed portions of the first insulating layer;
forming third conductive layer patterns on the second insulating layer in first region, the second region and the third region, respectively;
forming a third insulating layer on an entire surface of the third conductive layer and on exposed portions of the second insulating layer;
forming a pixel electrode on the third insulating layer in the first region, the pixel electrode adapted to be connected to the third conductive pattern in the second region;
forming a fourth insulating layer on the pixel electrode and on exposed portions of the third insulating layer;
patterning the fourth insulating layer to expose at least a portion of the pixel electrode in the first region;
forming an organic layer on the exposed portion of the pixel electrode, the organic layer including at least an emission layer; and
forming an opposite electrode on at least the organic layer, the second dummy pattern being arranged underneath the exposed portion of the pixel electrode.
2. The method of claim 1 , wherein the first region is an emission region, the second region is a thin film transistor region, and the third region is a capacitor region.
3. The method of claim 1 , wherein the first conductive layer patterns include a first dummy pattern, a polysilicon layer pattern including a channel region and source and drain regions, and a first electrode of a capacitor.
4. The method of claim 1 , wherein the first insulating layer is a gate insulating layer.
5. The method of claim 1 , wherein the second insulating layer is an interlayer insulating layer.
6. The method of claim 1 , wherein the third insulating layer includes either a passivation layer and a planarization layer or a laminated layer of the passivation layer and the planarization layer.
7. The method of claim 1 , wherein the pixel electrode comprises reflective material.
8. The method of claim 1 , wherein the pixel electrode is formed throughout the first region, the second region and the third region.
9. The method of claim 1 , wherein the patterned fourth insulating layer is a pixel defining layer.
10. The method of claim 1 , wherein the patterned fourth insulating layer has a thickness of 3,000Å or less.
11. The method of claim 1 , wherein the organic layer further includes at least one thin layer selected from a group consisting of a hole injection layer, a hole transporting layer, an electron transporting layer and an electron injection layer.
12. The method of claim 1 , wherein the organic layer is produced by a laser-induced thermal imaging (LITI) process.
13. A method of fabricating an organic light emitting display device, comprising:
forming first conductive layer patterns on a surface of a substrate that is divided into a first region, a second region and a third region, respectively;
forming a first insulating layer on the substrate and on the first conductive layer patterns;
forming second conductive layer patterns that includes a second dummy pattern, a gate electrode and a second electrode of a capacitor on the first insulating layer in the first region, the second region and the third region, respectively;
forming a second insulating layer on an entire surface of the second conductive layer and on exposed portions of the first insulating layer;
forming third conductive layer patterns on the second insulating layer in first region, the second region and the third region, respectively;
forming a third insulating layer on an entire surface of the third conductive layer and on exposed portions of the second insulating layer;
forming a pixel electrode on the third insulating layer in the first region, the pixel electrode adapted to be connected to the third conductive pattern in the second region;
forming a fourth insulating layer on the pixel electrode and on exposed portions of the third insulating layer;
patterning the fourth insulating layer to expose at least a portion of the pixel electrode in the first region, the second dummy pattern being underneath and aligned with the exposed portion of the pixel electrode in a direction perpendicular to the surface of the substrate;
forming an organic layer on the exposed portion of the pixel electrode, the organic layer including at least an emission layer; and
forming an opposite electrode on at least the organic layer.
14. The method of claim 1 , the first conductive layer patterns include a first dummy pattern, a polysilicon layer pattern including a channel region and source and drain regions, and a first electrode of a capacitor that correspond to the first region, second region and third region respectively, the third conductive layer patterns include a third dummy pattern, source and drain electrodes, and a third electrode of a capacitor that correspond to the first region, the second region and the third region respectively, wherein the first dummy pattern and the third dummy pattern, like the second dummy pattern, are arranged underneath the exposed portion of the pixel electrode.
15. The method of claim 14 , the first region being an emission region, wherein each of the first dummy pattern, the second dummy pattern and the third dummy pattern are adapted to increase a step height of the emission region.
16. The method of claim 1 , the forming of the organic layer includes a laser induced thermal imaging (LITI) process that comprises:
providing a donor substrate arrangement that includes a base substrate, a light-to-heat conversion layer arranged on the base substrate and a transfer layer arranged on the light-to-heat conversion layer;
placing the donor substrate arrangement onto a top surface of the patterned fourth insulating layer so that the transfer layer faces the exposed portion of the pixel electrode, wherein a distance between the exposed portion of the pixel electrode and the transfer layer is 300 nm or less; and
transferring the transfer layer to the exposed portion of the pixel electrode by applying laser radiation to the donor substrate arrangement.
17. A method of fabricating an organic light emitting display device, comprising:
forming first conductive layer patterns on a substrate that is divided into a first region, a second region and a third region, respectively;
forming a first insulating layer on the substrate and on the first conductive layer patterns;
forming second conductive layer patterns that includes a second dummy pattern, a gate electrode and a second electrode of a capacitor on the first insulating layer in the first region, the second region and the third region, respectively;
forming a second insulating layer on an entire surface of the second conductive layer and on exposed portions of the first insulating layer;
forming third conductive layer patterns on the second insulating layer in first region, the second region and the third region, respectively;
forming a third insulating layer on an entire surface of the third conductive layer and on exposed portions of the second insulating layer;
forming a pixel electrode on the third insulating layer in the first region, the pixel electrode adapted to be connected to the third conductive pattern in the second region;
forming a fourth insulating layer on the pixel electrode and on exposed portions of the third insulating layer;
patterning the fourth insulating layer to expose at least a portion of the pixel electrode in the first region;
forming an organic layer on the exposed portion of the pixel electrode, the organic layer including at least an emission layer; and
forming an opposite electrode on at least the organic layer, the second dummy pattern being arranged underneath the exposed portion of the pixel electrode, the first region being absent of a thin film transistor.
18. The method of claim 1 , the first region being absent of a thin film transistor and being absent of a capacitor.
19. The method of claim 1 , an entirety of the exposed portion of the pixel electrode is arranged within the first region.