IP Library › Granted Patent US 8,067,255
Granted Patent B2
US 8,067,255 · App. 12/213,686 · Granted Nov 29, 2011

Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device

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Quick Facts
Patent No.
US 8,067,255
App. No.
12/213,686
Granted
Nov 29, 2011
Kind
B2
Abstract

Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

Claims (7)

1. A method of manufacturing a nitride semiconductor light emitting device including a coat film formed at a light emitting portion, comprising:

forming said coat film including an aluminum oxynitride crystal at said light emitting portion by electron beam evaporation or sputtering, wherein said nitride semiconductor light emitting device is a nitride semiconductor laser device, and said coat film is formed on a facet at a light emitting side of said nitride semiconductor laser device,

wherein said coat film is formed by using an aluminum target and introducing nitrogen and oxygen into a deposition room.

2. The method of manufacturing the nitride semiconductor light emitting device according to claim 1 , wherein a film made of an oxide is formed on said coat film by electron beam evaporation or sputtering.

3. The method of manufacturing the nitride semiconductor light emitting device according to claim 1 , wherein a film made of a nitride is formed on said coat film by electron beam evaporation or sputtering.

4. The method of manufacturing the nitride semiconductor light emitting device according to claim 1 , wherein a film made of an oxynitride is formed on said coat film by electron beam evaporation or sputtering.

5. The method of manufacturing the nitride semiconductor light emitting device according to claim 1 , wherein a magnesium fluoride film is formed on said coat film by electron beam evaporation or sputtering.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2022
From: SHARP KABUSHIKI KAISHA
To: SHARP FUKUYAMA LASER CO., LTD.
Reel/Frame 059039/0927 →