Solid-state imaging device

1. A solid-state imaging device comprising:

a photoelectric conversion section which is provided for each pixel and which converts light incident thereon into a signal;

a circuit region which transfers the signal from the photoelectric conversion section;

a multilayer film including an insulating film and a wiring film, the multilayer film being disposed beneath the photoelectric conversion section; and

wherein there are a plurality of multilayer films and each multilayer film includes a layer of light absorbing material as the insulating film, wherein the layer of light absorbing material is located at a side of the photoelectric conversion section opposite a side at which light is primarily incident thereon, the light absorbing material absorbing a greater amount of light than silicon dioxide, wherein a gate electrode made of a polysilicon film with a gate insulating film between the polysilicon film and a silicon substrate, and a silicon carbide layer is formed adjacent the silicon substrate and the polysilicon film as the layer of light absorbing material.

2. The solid-state imaging device according to claim 1 , wherein the circuit region includes

an amplifier transistor for amplifying and outputting pixel signals corresponding to the amount of accumulated charges in the photoelectric conversion section,

a selection transistor for selecting a pixel from which signal charges are read, and

a reset transistor for resetting charges accumulated in the photoelectric conversion section.

3. The solid-state imaging device according to claim 2 , wherein the circuit region further includes a transfer transistor for selecting the timing of transfer of signal charges accumulated in the photoelectric conversion section to the amplifier transistor.

4. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion section includes

an n-type layer which accumulates electrons serving as signal charges, and

a p-type layer which is provided in a surface region of the n-type layer and which accumulates holes.

5. The solid-state imaging device according to claim 1 , wherein the transmission-preventing film is an interlayer film that absorbs light.

6. A solid-state imaging device comprising:

a photoelectric conversion section which is provided for each pixel and which converts light incident into a signal;

a multilayer film including an insulating film and wirings, the multilayer film being disposed beneath the photoelectric conversion section; and

wherein there are a plurality of multilayer films and each multilayer film includes a layer of light absorbing material as the insulating film, wherein the layer of light absorbing material is located at a side of the photoelectric conversion section opposite a side at which light is primarily incident thereon, the light absorbing material absorbing a greater amount of light than silicon dioxide, wherein the light absorbing material is silicon carbide.

7. A solid-state imaging apparatus comprising:

a photoelectric conversion section which is provided for each pixel and which converts light incident thereon into a signal;

a multilayer film including an insulating film and a wiring, the multilayer film being disposed beneath the photoelectric conversion section;

wherein there are a plurality of multilayer films and each multilayer film includes a layer of light absorbing material as the insulating film, the light absorbing material absorbing a greater amount of light than silicon dioxide; and

a signal processing portion which processes image signals based on the signals generated by the photoelectric conversion section, wherein the layer of light absorbing material is located at a side of the photoelectric conversion section opposite a side at which light is primarily incident thereon, wherein the light absorbing material is silicon carbide.