Solid-state imaging device
A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
1. A solid-state imaging device comprising:
a photoelectric conversion section which is provided for each pixel and which converts light incident thereon into a signal;
a circuit region which transfers signals accumulated by the photoelectric conversion section;
a multilayer film including an insulating film and a wiring, the multilayer film being disposed beneath the photoelectric conversion section; and
a transmission-preventing film comprised of a silicide barrier disposed at least between the wiring film in the multilayer film and the photoelectric conversion section, and further wherein the transmission-preventing film is located at a side of the photoelectric conversion section that is opposite a primary light incident side, the silicide barrier being formed at surfaces of photodiode sections and source/drain sections of the imaging device.
2. The solid-state imaging device according to claim 1 , wherein the circuit region includes
an amplifier transistor for amplifying and outputting pixel signals corresponding to the amount of accumulated charges in the photoelectric conversion section,
a selection transistor for selecting a pixel from which signal charges are read, and
a reset transistor for resetting charges accumulated in the photoelectric conversion section.
3. The solid-state imaging device according to claim 2 , wherein the circuit region further includes a transfer transistor for selecting the timing of transfer of signal charges accumulated in the photoelectric conversion section to the amplifier transistor.
4. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion section includes
an n-type layer which accumulates electrons serving as signal charges, and
a p-type layer which is provided in a surface region of the n-type layer and which accumulates holes.
5. The solid-state imaging device according to claim 1 , further comprising, a gate electrode made of a polysilicon film disposed with a gate insulating film a substrate, and the silicide film is formed by placing a metal film over the polysilicon film.
6. The solid-state imaging device of claim 1 , wherein the silicide barrier has a portion formed at a surface of the substrate by a reaction with the substrate material.
7. The solid-state imaging device of claim 1 , wherein the silicide barrier is formed such that it completely covers each gate electrode to which it is applied.
8. A solid-state imaging device comprising:
a photoelectric conversion section which is provided for each pixel and which converts light incident thereon into a signal;
a multilayer film including an insulating film and a wiring, the multilayer film being disposed under the photoelectric conversion section; and
a transmission-preventing film comprised of a silicide barrier which is disposed between the wiring and the photoelectric conversion section, and further wherein the transmission-preventing film is located at a side of the photoelectric conversion section that is opposite a primary light incident side, the silicide barrier being formed at surfaces of photodiode sections and source/drain sections of the imaging device.
9. The solid-state imaging device according to claim 8 , wherein the transmission-preventing film is a reflection film.
10. The solid-state imaging device of claim 8 , wherein the silicide barrier has a portion formed at a surface of the substrate by a reaction with the substrate material.
11. The solid-state imaging device of claim 8 , wherein the silicide barrier is formed such that it completely covers each gate electrode to which it is applied.
12. A solid-state imaging apparatus comprising:
a photoelectric conversion section which is provided for each pixel and which converts light incident thereon into a signal;
a multilayer film including an insulating film and a wiring, the multilayer film being disposed under the photoelectric conversion section;
a transmission-preventing film comprised of a silicide barrier which is disposed between the wiring and the photoelectric conversion section; and
a signal processing portion which processes image signals, and further wherein the transmission-preventing film is located at a side of the photoelectric conversion section that is opposite a primary light incident side, the silicide barrier being formed at surfaces of photodiode sections and source/drain sections of the imaging device.
13. The solid-state imaging apparatus of claim 12 , wherein the silicide barrier has a portion formed at a surface of the substrate by a reaction with the substrate material.
14. The solid-state apparatus device of claim 12 , wherein the silicide barrier is formed such that it completely covers each gate electrode to which it is applied.