Semiconductor memory device
A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parallel between an output line and the ground. The voltage is adjusted in response to the surrounding temperature in such a way that a prescribed number of drive MOS transistors selected from among the plurality of MOS transistors are normally and simultaneously driven. Thus, it is possible to precisely adjust the voltage in units of adjustment corresponding to differences of width dimensions without degrading the performance of the semiconductor memory device in a low current consumption mode.
1. A semiconductor memory device comprising:
a memory cell array; and
a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parallel between an output line for outputting the voltage and a ground,
wherein the voltage is adjusted in response to a surrounding temperature in such a way that a prescribed number of drive MOS transistors selected from among the plurality of MOS transistors are normally and simultaneously driven.
2. A semiconductor memory device comprising:
a memory cell array; and
a voltage generation circuit for generating a voltage applied to the memory cell array,
wherein the voltage generation circuit includes
a temperature sensor for detecting a surrounding temperature,
a voltage generator for generating the voltage to be applied to the memory cell array,
a control circuit for outputting a control signal based on an output of the temperature sensor, and
a voltage adjustment circuit for adjusting the voltage generated by the voltage generator based on the control signal,
wherein the voltage adjustment circuit includes a plurality of drive MOS transistors having different width dimensions which are selectively connected in parallel between an output line for outputting the voltage and a ground, and
wherein the control circuit controls the voltage adjustment circuit based on the control signal, such that a prescribed number of drive MOS transistors selected from among the plurality of drive NMOS transistors are normally and simultaneously driven.
3. A semiconductor memory device according to claim 2 , wherein the voltage adjustment circuit includes a plurality of drive transistor selectors, each of which selectively drives one of the drive MOS transistors connected thereto.