Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
View Patent ↗A nitride semiconductor light emitting device includes an n-type GaN substrate ( 101 ) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate ( 101 ). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer ( 108 ), a p-type AlGaInN cladding layer ( 107 ) under the p-type AlGaInN contact layer ( 108 ), and a p-type AlGaInN layer ( 106 ). A protection film ( 113 ) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.
1. A nitride semiconductor light emitting device comprising:
a nitride semiconductor substrate; and
a nitride semiconductor layer having a p-type nitride semiconductor layer formed on the nitride semiconductor substrate, wherein
the nitride semiconductor layer has a ridge stripe part on a top face thereof,
the ridge stripe part has a current injection region into which current is injected,
an electrode is formed over the ridge stripe part,
an electrode pad is formed on the top face of the nitride semiconductor layer at least over the ridge stripe part and a part adjacent thereto, the electrode pad being in contact with the electrode,
a protection film is formed to cover at least a part of the electrode pad located over the ridge stripe part and the part adjacent thereto, a part of the protection film not located over the ridge stripe part being so formed as to be partially exposed to external conditions, and
the protection film is made up of a silicon nitride film and/or a silicon nitride oxide film.
2. The nitride semiconductor light emitting device according to claim 1 , wherein a thickness of the silicon nitride film or the silicon nitride oxide film is 6 nanometers or larger.
3. The nitride semiconductor light emitting device according to claim 1 , wherein the silicon nitride oxide film is expressed by a general formula SiO 1-x N x , and a composition ratio of nitrogen x in the silicon nitride oxide film is 0.1 or more.
4. The nitride semiconductor light emitting device according to claim 1 , wherein the protection film is not disposed on sidewalls of the nitride semiconductor layer.
5. The nitride semiconductor light emitting device according to claim 1 , wherein the nitride semiconductor layer further includes an active layer, and the protection film is not disposed below the active layer.
6. The nitride semiconductor light emitting device according to claim 1 , wherein the electrode pad is between an uppermost surface of the electrode and the protection film.
7. The nitride semiconductor light emitting device according to claim 1 , wherein the electrode does not directly contact the protection film.
8. The nitride semiconductor light emitting device according to claim 1 , wherein the electrode pad is between a side surface of the electrode and the protection film.
9. The nitride semiconductor light emitting device according to claim 1 , wherein an area of the upper surface of the electrode pad is greater than an upper surface area of the protection film.
10. The nitride semiconductor light emitting device according to claim 1 , wherein the protection film exposes a portion of the electrode pad adjacent to the ridge stripe part.