Nitride semiconductor light-emitting device
View Patent ↗In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
1. A nitride semiconductor light-emitting device comprising:
a nitride semiconductor substrate wherein a groove is formed on the surface; and
a nitride semiconductor layer provided so as to cover a side wall of the groove and having the crystal surface which is tilted at an angle of 53.5° to 63.40° with respect to a surface of the nitride semiconductor substrate.
2. The nitride semiconductor light-emitting device according to claim 1 , wherein said groove is striped and is parallel to the <1-100> direction.
3. The nitride semiconductor light-emitting device comprising:
a nitride semiconductor substrate wherein a groove is formed on the surface; and
a nitride semiconductor layer provided so as to cover a side wall of the groove and having a {11-22} crystal face.
4. The nitride semiconductor light-emitting device according to claim 3 , wherein the main surface of the nitride semiconductor substrate is the C surface {0001} and the slope of the main surface of the nitride semiconductor substrate is within 2°.