Semiconductor device
The present invention provides a semiconductor device excellent in the reliability of connection between the semiconductor device and a mounting board. The semiconductor device has external connecting terminals. Each of the external connecting terminals includes a Cu electrode, intermetallic compounds containing Cu, each formed over the Cu electrode, stopper portions which cover surfaces of the intermetallic compounds at intervals, and a solder alloy comprising Bi and an impurity containing Sn formed over the stopper portions and the intermetallic compounds.
1 . A semiconductor device comprising:
external connecting terminals,
wherein said each external connecting terminal includes:
a Cu electrode,
intermetallic compounds containing Cu, each formed over the Cu electrode,
stopper portions which cover surfaces of the intermetallic compounds at intervals, and
a solder alloy comprising Bi and an impurity containing Sn formed over the stopper portions and the intermetallic compounds.
2 . The semiconductor device according to claim 1 , wherein the solder alloy is formed of solder in which a composition ratio of said Bi ranges from 32 wt % or more to 75 wt % or less.
3 . The semiconductor device according to claim 1 , wherein the solder alloy contains Ag.
4 . The semiconductor device according to claim 1 , wherein the stopper portion comprises an element having a positive enthalpy of mixing at the time that the same is mixed into Cu or the respective intermetallic compounds, or the element and a compound.
5 . The semiconductor device according to claim 1 , wherein the stopper portion comprises Bi or Bi and Ag3Sn.
6 . The semiconductor device according to claim 2 , wherein the solder alloy contains Ag.
7 . The semiconductor device according to claim 2 , wherein the stopper portion comprises an element having a positive enthalpy of mixing at the time that the same is mixed into Cu or the respective intermetallic compounds, or the element and a compound.
8 . The semiconductor device according to claim 3 , wherein the stopper portion comprises an element having a positive enthalpy of mixing at the time that the same is mixed into Cu or the respective intermetallic compounds, or the element and a compound.
9 . The semiconductor device according to claim 2 , wherein the stopper portion comprises Bi or Bi and Ag3Sn.
10 . The semiconductor device according to claim 3 , wherein the stopper portion comprises Bi or Bi and Ag3Sn.
11 . The semiconductor device according to claim 4 , wherein the stopper portion comprises Bi or Bi and Ag3Sn.