Method of joining and method of fabricating an organic light emitting diode display device using the same

1. A method of fabricating an organic light emitting diode (OLED) display device, comprising:

forming a first metal layer on one surface of a support;

forming a second metal layer on one surface of a flexible layer;

cleaning the first metal layer and the second metal layer;

joining the second metal layer to the first metal layer, such that the second metal layer is between the flexible layer and the first metal layer;

forming an OLED on the flexible layer, such that the flexible layer is between the OLED and the support, the OLED including a first electrode, an organic layer having a light emitting layer, and a second electrode; and

removing the support with the first and second metal layers.

2. The method as claimed in claim 1 , wherein cleaning the first and second metal layers includes:

a first cleaning step, the first cleaning step including drying the first and second metal layers after immersion thereof in a cleaning fluid;

a second cleaning step, the second cleaning step including cleaning the first and second metal layers via a D-sonic process or a rinsing process in deionized water; and

a third cleaning step, the third cleaning step being substantially same as the first cleaning step.

3. The method as claimed in claim 1 , wherein the first and second metal layers are formed of one or more of iron, nickel, tin, zinc, chromium, cobalt, silicon, magnesium, titanium, zirconium, aluminum, silver, copper, and an alloy thereof.

4. The method as claimed in claim 1 , wherein joining the first and second metal layers includes:

a first joining process, the first joining process including positioning the first and second metal layers adjacent to each other at room temperature;

an intermediate cleaning process, the intermediate cleaning process including cleaning the first and second metal layers via a D-sonic process or a rinsing process in deionized water, and drying the first and second metal layers using isopropyl alcohol; and

a second joining process, the second joining process including pressing and annealing the first and second metal layers to each other.

5. The method as claimed in claim 1 , wherein each of the first and second metal layers is formed to a thickness of about 1,000 angstroms to about 10,000 angstroms.

6. The method as claimed in claim 1 , further comprising treating the first and second metal layers with hydrogen fluoride after the cleaning.

7. The method as claimed in claim 6 , wherein cleaning the first and second metal layers includes:

a first cleaning step, the first cleaning step including drying the first and second metal layers after immersion thereof in a cleaning fluid;

a second cleaning step, the second cleaning step including cleaning the first and second metal layers via a D-sonic process or a rinsing process in deionized water; and

a third cleaning step, the third cleaning step being substantially same as the first cleaning step.

8. The method as claimed in claim 6 , wherein each of the first and second metal layers is formed to a thickness of about 1,000 angstroms to about 10,000 angstroms.

9. The method as claimed in claim 6 , wherein the first and second metal layers are formed of one or more of iron, nickel, tin, zinc, chromium, cobalt, silicon, magnesium, titanium, zirconium, aluminum, silver, copper, and an alloy thereof.

10. The method as claimed in claim 6 , wherein joining the first and second metal layers includes:

a first joining process, the first joining process including positioning the first and second metal layers adjacent to each other at room temperature; and

a second joining process, the second joining process including pressing and annealing the first and second metal layers to each other.