Semiconductor device and method of fabrication thereof
View Patent ↗A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
1. A semiconductor device comprising:
a semiconductor substrate;
isolating insulation films each filled a trench in said semiconductor substrate and having a portion protruding above said semiconductor substrate;
a gate insulation film formed between said isolating insulation films on and in contact with said semiconductor substrate;
a first polysilicon layer formed on and in contact with said gate insulation film; and
a second polysilicon layer formed on said first polysilicon layer,
wherein said first and second polysilicon layers contain an impurity allowing said first and second polysilicon layers to be conductor, and
a distribution of said impurity's concentration throughout the first and second polysilicon layers has an absolute maximum value located in said first polysilicon layer, wherein said distribution substantially monotonously increases from said second polysilicon layer to said absolute maximum value and decreases from said absolute maximum value toward said gate insulation film.
2. The semiconductor device according to claim 1 , wherein said first polysilicon layer has a crystal grain size of at most 70 nm.
3. The semiconductor device according to claim 1 , wherein said first polysilicon layer has a thickness of 15 to 70 nm.
4. The semiconductor device according to claim 1 , wherein said first polysilicon layer contains one of phosphorus and boron as said impurity, and a concentration of said impurity has a maximum value of at least 1×10 20 to 1×10 21 atoms/cm 3 .
5. The semiconductor device according to claim 1 , wherein said first polysilicon layer is smaller in maximum crystal grain size than said second polysilicon layer.
6. The semiconductor device according to claim 1 , wherein said maximum value of said first polysilicon layer is at least two times higher than a maximum value of said second polysilicon layer.
7. A semiconductor device comprising:
a semiconductor substrate;
isolating insulation films each filled a trench in said semiconductor substrate and having a portion protruding above said semiconductor substrate;
a gate insulation film formed between said isolating insulation films on and in contact with said semiconductor substrate;
a first polysilicon layer formed on and in contact with said gate insulation film; and
a second polysilicon layer formed on said first polysilicon layer, wherein said first polysilicon layer is smaller in crystal grain size than said second polysilicon layer in plan view, wherein said first and second polysilicon layers contain an impurity allowing said first and second polysilicon layers to be conductor, and
a distribution of said impurity's concentration throughout the first and second polysilicon layers has an absolute maximum value located in said first polysilicon layer, wherein said distribution substantially monotonously increases from said second polysilicon layer to said absolute maximum value and decreases from said absolute maximum value toward said gate insulation film.
8. The semiconductor device according to claim 7 , wherein said first polysilicon layer has a crystal grain size of at most 70 nm.
9. The semiconductor device according to claim 7 , wherein said first polysilicon layer has a thickness of 15 to 70 nm.
10. The semiconductor device according to claim 7 , wherein said first polysilicon layer contains one of phosphorus and boron as said impurity, and a concentration of said impurity has a maximum value of at least 1×10 20 to 1×10 21 atoms/cm 3 .
11. The semiconductor device according to claim 7 , wherein said first polysilicon layer is smaller in maximum crystal grain size than said second polysilicon layer.
12. The semiconductor device according to claim 7 , wherein said maximum value of said first silicon layer is at least two times higher than said maximum value of said second silicon layer.