Thin film transistor, light-emitting display device having the same and associated methods
View Patent ↗A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.
1. A thin film transistor (TFT), comprising:
an N-type oxide semiconductor layer on a substrate;
a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer;
a source electrode contacting a first portion of the N-type oxide semiconductor layer; and
a drain electrode contacting a second portion of the N-type oxide semiconductor layer, wherein:
the first and second portions each have a doped region containing ions of at least one Group 1 element, and
the ions of the at least one Group 1 element in the doped region have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.
2. The TFT as claimed in claim 1 , wherein a concentration of the ions of the at least one Group 1 element in the doped region is about 10 16 to about 10 21 atoms/cm 3 .
3. The TFT as claimed in claim 1 , wherein the ions of the at least one Group 1 elements are ions of one element selected from the group consisting of hydrogen, lithium, sodium, potassium, rubidium, cesium, and francium.
4. The TFT as claimed in claim 1 , wherein the N-type oxide semiconductor layer includes one or more of the following N-type oxide semiconductor materials: zinc oxide, zinc gallium oxide, zinc indium oxide, indium oxide, zinc gallium indium oxide, or zinc tin oxide.
5. The TFT as claimed in claim 1 , wherein portions of the source and drain electrodes contacting the first and second portions include one or more of aluminum, aluminum alloy, silver, silver alloy, molybdenum-tungsten, molybdenum, copper, indium tin oxide, or indium zinc oxide.
6. A method of manufacturing a thin film transistor (TFT), the method comprising:
forming an N-type oxide semiconductor layer on a substrate;
forming a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer;
forming a source electrode that contacts a first portion of the N-type oxide semiconductor layer; and
forming a drain electrode that contacts a second portion of the N-type oxide semiconductor layer, wherein:
the first and second portions each include a doped region that is doped with ions of at least one Group 1 element, and
the ions of the at least one Group 1 element in the doped region have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.
7. The method as claimed in claim 6 , wherein:
the gate dielectric layer is on the gate electrode such that the gate electrode is between the gate dielectric layer and the substrate, and
the N-type oxide semiconductor layer is on the gate dielectric layer.
8. The method as claimed in claim 7 , wherein forming the first and second portions includes:
disposing an implantation mask adjacent to the N-oxide semiconductor layer prior to forming the source and drain electrodes, the mask including openings corresponding to the first and second portions, and
implanting the ions of the at least one Group 1 element into the doped regions through the openings in the mask.
9. The method as claimed in claim 6 , wherein:
the gate dielectric layer is on the N-type oxide semiconductor layer such that the N-type oxide semiconductor layer is between the gate dielectric layer and the substrate, and
the gate electrode is on the gate dielectric layer.
10. The method as claimed in claim 9 , wherein the method comprises:
forming an interlayer insulator on the gate electrode and on the gate dielectric layer;
forming contact holes in the interlayer insulator and the gate dielectric layer, the contact holes exposing the first and second portions of the N-type oxide semiconductor layer;
doping the exposed first and second portions through the contact holes with the ions of the at least one Group 1 element; and
forming the source and drain electrodes in the contact holes.
11. The method as claimed in claim 6 , wherein the ions of the at least one Group 1 element are doped in the doped region to a concentration of about 10 16 to about 10 21 atoms/cm 3 .
12. The method as claimed in claim 6 , wherein the ions of the at least one Group 1 elements are ions of one element selected from the group consisting of hydrogen, lithium, sodium, potassium, rubidium, cesium, and francium.
13. The method as claimed in claim 6 , wherein the N-type oxide semiconductor layer includes one or more of the following N-type oxide semiconductor materials: zinc oxide, zinc gallium oxide, zinc indium oxide, indium oxide, zinc gallium indium oxide, or zinc tin oxide.
14. The method as claimed in claim 6 , wherein portions of the source and drain electrodes contacting the first and second portions are formed with one or more of aluminum, aluminum alloy, silver, silver alloy, molybdenum-tungsten, molybdenum, copper, indium tin oxide, or indium zinc oxide.
15. A light emitting display device, comprising:
a substrate;
a TFT on the substrate; and
a light emitting diode on the substrate and electrically coupled to the TFT, wherein:
the TFT includes an N-type oxide semiconductor layer on the substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer,
the first and second portions have a doped region containing ions of at least one Group 1 element, and
the ions of the at least one Group 1 element in the doped region have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer.
16. The light emitting display device as claimed in claim 15 , wherein a concentration of the ions of the at least one Group 1 element in the doped region is about 10 16 to about 10 21 atoms/cm 3 .
17. The light emitting display device as claimed in claim 15 , wherein the ions of the at least one Group 1 element are ions of one element selected from the group consisting of hydrogen, lithium, sodium, potassium, rubidium, cesium, and francium.
18. The light emitting display device as claimed in claim 15 , wherein the N-type oxide semiconductor layer includes one or more of the following N-type oxide semiconductor materials: zinc oxide, zinc gallium oxide, zinc indium oxide, indium oxide, zinc gallium indium oxide, or zinc tin oxide.
19. The light emitting display device as claimed in claim 15 , wherein portions of the source and drain electrodes contacting the first and second portions include one or more of aluminum, aluminum alloy, silver, silver alloy, molybdenum-tungsten, molybdenum, copper, indium tin oxide, or indium zinc oxide.