Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
View Patent ↗There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
1. A method of producing a semiconductor device, the method comprising the steps of:
forming a first opening through a first hard mask above a substrate;
introducing a first impurity through said first hard mask into an impurity region of said substrate, said impurity region becoming a region of a first conductivity-type;
forming a second hard mask within said first opening;
forming a second opening between said first hard mask and said second hard mask; and
introducing a second impurity through said first hard mask and said second hard mask into a compensation region of said substrate, said compensation region becoming a region of a second conductivity-type,
wherein at least a portion of said compensation region is within said impurity region, said conductivity of said second conductivity-type being opposite to said conductivity of said first conductivity-type.
2. A method of producing a semiconductor device according to claim 1 , wherein the step of introducing the first impurity is performed before the step of introducing the second impurity.
3. A method of producing a semiconductor device according to claim 1 , wherein said impurity region is in alignment with said first opening.
4. A method of producing a semiconductor device according to claim 1 , wherein first ions introduce said first impurity into said impurity region.
5. A method of producing a semiconductor device according to claim 4 , wherein said first ions are implanted through said first opening.
6. A method of producing a semiconductor device according to claim 4 , wherein said first ions are of said first conductivity-type.
7. A method of producing a semiconductor device according to claim 4 , wherein said first ions are implanted through a stopper layer, said stopper layer being between said first hard mask and said substrate.
8. A method of producing a semiconductor device according to claim 7 , wherein said first opening terminates at said stopper layer.
9. A method of producing a semiconductor device according to claim 1 , wherein said compensation region is in alignment with said second opening.
10. A method of producing a semiconductor device according to claim 1 , wherein second ions introduce said second impurity into said compensation region.
11. A method of producing a semiconductor device according to claim 10 , wherein said second ions are implanted through said second opening.
12. A method of producing a semiconductor device according to claim 10 , wherein said second ions are of said second conductivity-type.
13. A method of producing a semiconductor device according to claim 10 , wherein said second ions are implanted through a stopper layer, said stopper layer being between said second hard mask and said substrate.
14. A method of producing a semiconductor device according to claim 13 , wherein said second opening terminates at said stopper layer.
15. A method of producing a semiconductor device according to claim 1 , the method further comprising:
forming a sacrificial film on side walls of said first opening, said sacrificial film spacing said second hard mask from said first hard mask.
16. A method of producing a semiconductor device according to claim 15 , wherein said sacrificial film is formed of at least polyethylene or a polymer containing C x F y .
17. A method of producing a semiconductor device according to claim 15 , wherein said sacrificial film is deposited by chemical vapor deposition or physical vapor deposition.
18. A method of producing a semiconductor device according to claim 15 , wherein said sacrificial film is removed to form said second opening.
19. A method of producing a semiconductor device according to claim 15 , wherein a third opening is between said second hard mask and another sidewall of said first hard mask, removal of said sacrificial film forming said third opening.
20. A method of producing a semiconductor device according to claim 19 , wherein another compensation region of said substrate is in alignment with said third opening.
21. A method of producing a semiconductor device according to claim 20 , wherein second ions introduce said second impurity into said another compensation region.
22. A method of producing a semiconductor device according to claim 20 , wherein second ions are implanted through said third opening.