IP Library Granted Patent US 8,969,126
Granted Patent B2
US 8,969,126 · App. 12/225,100 · Granted Mar 3, 2015

Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method

Inventors: Jung-Bum Kim (Daejeon, KR); Jung-Hyoung Lee (Daejeon, KR)
Assignee: LG Chem, Ltd.
H01L51/5092H01L2251/5315
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Quick Facts
Patent No.
US 8,969,126
App. No.
12/225,100
Granted
Mar 3, 2015
Kind
B2
Abstract

Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer.

Claims (9)

1. A method of fabricating an organic light emitting device, comprising the steps of

sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and

forming a thin metal film directly on a native metal oxide layer that is spontaneously formed on the cathode before forming of the organic material layers,

wherein the thin metal film is made of metal selected from the group consisting of Al and Ag and has a thickness of greater than or equal to 1 nm and less than 7 nm, and

wherein the thin metal film is doped into the native metal oxide layer to change an interface junction characteristic between the native metal oxide layer and the at least one organic material layer provided on the native oxide layer.

2. The method as set forth in claim 1 , wherein the cathode is made of a material selected from the group consisting of aluminum, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead, and an alloy thereof.

3. The method as set forth in claim 1 , wherein the thin metal film has a thickness in the range of 1 to 5 nm.

4. The method as set forth in claim 1 , wherein the forming of the thin metal film and the forming of the organic material layers as a subsequent process are performed in situ.

5. The method as set forth in claim 1 , wherein the thin metal film is formed on an entire surface of the substrate on which the cathode is formed.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2016
From: LG CHEM, LTD.
To: LG DISPLAY CO., LTD.
Reel/Frame 038264/0250 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2008
From: KIM, JUNG-BUM; LEE, JUNG-HYOUNG
To: LG CHEM, LTD.
Reel/Frame 021553/0693 →
Continuity (2)
Provisional Application 60782287 · Mar 15, 2006
Related Publication 20090167163A1 · Jul 2, 2009