Fabrication method for organic electronic device and organic electronic device fabricated by the same method

1. A method of fabricating an organic electronic device by sequentially stacking a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of:

1) forming a layer on a native oxide layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer,

2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to change the native oxide layer into a metal oxide layer, and

3) treating the metal oxide layer with inert gas plasma to remove the metal oxide layer.

2. The method of fabricating the organic electronic device according to claim 1 , wherein the first electrode is formed of a material selected from the group consisting of aluminum, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead, and an alloy thereof.

3. The method of fabricating the organic electronic device according to claim 1 , wherein the metal having a higher oxidation rate than the first electrode is selected from alkali metal, alkaline earth metal, and a mixture thereof.

4. The method of fabricating the organic electronic device according to claim 1 , wherein the layer formed by using the metal having a higher oxidation rate than the first electrode is formed to a thickness of 1 to 10 nm.

5. The method of fabricating the organic electronic device according to claim 1 , wherein the layer formed by using a metal having a higher oxidation rate than the first electrode is formed using a shadow mask.

6. The method of fabricating the organic electronic device according to claim 1 , wherein the inert gas is argon (Ar), krypton (Kr), xenon (Xe) or radon (Rn).

7. The method of fabricating the organic electronic device according to claim 1 , wherein the condition of the oxygen plasma treatment is an RF power of 60 to 100 W, an oxygen flow rate of 20 to 50 sccm, a pressure of 10 to 20 mtorr, and a time of 30 to 100 seconds.

8. The method of fabricating the organic electronic device according to claim 1 , wherein the condition of the inert gas plasma treatment is an RF power of 300 to 600 W, an inert gas flow rate of 5 to 20 sccm, a pressure of 5 to 20 mtorr, and a time of 200 to 500 seconds.

9. The method of fabricating the organic electronic device according to claim 1 , wherein the organic electronic device is an organic light emitting device.

10. The method of fabricating the organic electronic device according to claim 9 , wherein the first electrode is an anode, and the second electrode is a cathode.

11. The method of fabricating the organic electronic device according to claim 9 , wherein the first electrode is a cathode, and the second electrode is an anode.

12. The method of fabricating the organic electronic device according to claim 9 , wherein among the organic material layers, a layer making contact with the layer formed by using a metal having a higher oxidation rate than the first electrode is an electron injecting layer or a hole injecting layer.

13. The method of fabricating the organic electronic device according to claim 9 , wherein the organic light emitting device is of a top light emitting type, or of a dual light emitting type.