IP Library Granted Patent US 8,361,548
Granted Patent B2
US 8,361,548 · App. 12/229,307 · Granted Jan 29, 2013

Method for efficient coating of substrates including plasma cleaning and dehydration

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Quick Facts
Patent No.
US 8,361,548
App. No.
12/229,307
Granted
Jan 29, 2013
Kind
B2
Abstract

A process for the coating of substrates comprising insertion of a substrate into a process oven, plasma cleaning of the substrate, rehydration of the substrate, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a gas plasma generator, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Claims (45)

1. A process for coating of substrates comprising the steps of:

inserting a substrate into a first process chamber;

plasma cleaning said substrate in said first process chamber;

rehydrating said substrate in said first process chamber after said step of plasma cleaning;

dehydrating said substrate in said first process chamber after said step of said rehydrating, thereby removing all surface moisture from said substrate; and

pre-determining a first specific volume of liquid silane to be used for the process;

withdrawing said first specific volume of liquid silane from a first chemical reservoir;

supplying the first specific volume of liquid silane to a first heated vaporization chamber, said first heated vaporization chamber fluidically coupled to and fluidically isolatable from said first process chamber;

vaporizing said first specific volume of liquid silane; and

supplying some of the vapor of said first specific volume of liquid silane to said first process chamber, thereby coating said substrate.

2. A process for coating of substrates comprising the steps of:

inserting a substrate into a first process chamber;

plasma cleaning said substrate in said first process chamber;

rehydrating said substrate in said first -process chamber after said step of plasma cleaning;

dehydrating said substrate in said first process chamber after said step of said rehydrating, thereby removing surface moisture from said substrate;

wherein the step of dehydrating said substrate comprises the steps of:

flooding said first process chamber with heated inert gas; and

evacuating said first process chamber; and

pre-determining a first specific volume of liquid silane to be used for the process;

withdrawing said first specific volume of liquid silane from a first chemical reservoir;

supplying the first specific volume of liquid silane to a first heated vaporization chamber, said first heated vaporization chamber fluidically coupled to and fluidically isolatable from said first process chamber;

vaporizing said first specific volume of liquid silane; and

supplying some of the vapor of said first specific volume of liquid silane to said first process chamber, thereby coating said substrate.

3. The process of claim 2 wherein said silane is an amino silane.

4. The process of claim 2 wherein said silane is an epoxy silane.

5. The process of claim 2 wherein said silane is a mercapto silane.

6. The process of claim 1 wherein the step of dehydrating said substrate comprises the steps of:

flooding said first process chamber with heated inert gas; and

evacuating said first process chamber.

7. The process of claim 2 wherein the step of rehydrating said substrate comprises supplying water to a second vaporization chamber that is fluidically coupled to said first process chamber.

8. A process for coating of substrates comprising the steps of:

inserting a substrate into a first process chamber;

plasma cleaning said substrate in said first process chamber;

rehydrating said substrate after said step of plasma cleaning said substrate;

dehydrating said substrate after said step of rehydrating said substrate, wherein the step of dehydrating said substrate comprises:

flooding said first process chamber with a heated inert gas; and

evacuating said first process chamber;

pre-heating a vaporization chamber to a first temperature with a vaporization chamber heater;

pre-determining a first volume of liquid silane to be used for the process;

pre-determining a first amount of time to be used for the process;

supplying the first volume of liquid silane to the heated vaporization chamber, wherein said heated vaporization chamber is fluidically coupled to said process chamber by a passage open continuously while said first volume of liquid silane is supplied to said heated vaporization chamber; and

vaporizing said first volume of said liquid silane, wherein the vapor of said liquid silane enters said process chamber through the open passageway, whereby the vapor of said liquid silane reacts with the substrate to create a layer;

allowing the vapor of said liquid silane to remain in the process chamber for the first pre-determined amount of time,

wherein said heated vaporization chamber is fluidically coupled to said process chamber by a passage open continuously during said first pre-determined amount of time, and wherein said process chamber is not evacuated during said first pre-determined amount of time.

9. The process of claim 8 wherein the step of rehydrating said substrate comprises supplying water to a second vaporization chamber that is fluidically coupled to said first process chamber.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2023
From: YIELD ENGINEERING SYSTEMS, INC.
To: YIELD ENGINEERING SPV LLC
Reel/Frame 063584/0553 →
SECURITY INTEREST Recorded May 9, 2023
From: YIELD ENGINEERING SPV LLC
To: AON IP ADVANTAGE FUND LP
Reel/Frame 063585/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2012
From: MOFFAT, WILLIAM A
To: YIELD ENGINEERING SYSTEMS, INC.
Reel/Frame 029342/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2012
From: SAUTTER, KENNETH M
To: YIELD ENGINEERING SYSTEMS, INC.
Reel/Frame 029342/0479 →