Semiconductor device
View Patent ↗A semiconductor device has a semiconductor substrate having a first conductivity type and a resistor having a substantially U-shaped contour and being formed from an epitaxial layer disposed on the semiconductor substrate and having a second conductivity type different from the first conductivity type. A first trench is formed around an exterior of the resistor to a depth sufficient enough to reach the semiconductor substrate. A second trench is formed in an interior of the resistor to provide the resistor with the U-shaped contour. First and second insulating films are disposed in the first and second trenches, respectively. A heavily-doped region of the second conductivity type having an impurity concentration sufficient to obtain a contact with a metal wire is arranged at both ends of the resistor.
1. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type;
a resistor having a substantially U-shaped contour and being formed from an epitaxial layer disposed on the semiconductor substrate, the epitaxial layer having a second conductivity type different from the first conductivity type;
a first trench formed around an exterior of the resistor and having a depth sufficient enough to reach the semiconductor substrate;
a second trench formed in an interior of the resistor to provide the resistor with the U-shaped contour;
a first insulating film disposed in the first trench;
a second insulating film disposed in the second trench; and
a heavily-doped region of the second conductivity type having an impurity concentration sufficient to obtain a contact with a metal wire arranged at both ends of the resistor.
2. A semiconductor device according to claim 1 ; wherein the epitaxial layer has a thickness in the range of from 0.1 μm to 10 μm.
3. A semiconductor device according to claim 2 ; wherein the epitaxial layer has a specific resistance in the range of from 0.01 Ωcm to 150 Ωcm.
4. A semiconductor device according to claim 1 ; wherein the heavily-doped region is formed of BF 2 .
5. A semiconductor device according to claim 1 ; wherein the heavily-doped region is formed of B.
6. A semiconductor device according to claim 1 ; wherein the impurity concentration of the heavily-doped region is equal to or more than 1E15 atm/cm 3 .
7. A semiconductor device according to claim 6 ; wherein the heavily-doped region is formed of B.
8. A semiconductor device according to claim 1 ; wherein the heavily-doped region is formed of BF 2 ; and wherein the impurity concentration of the heavily-doped region is equal to 1E15 atm/cm 3 .
9. A semiconductor device according to claim 1 ; wherein the epitaxial layer has a specific resistance in the range of from 1 Ωcm to 50 Ωcm.
10. A semiconductor device according to claim 1 ; wherein the epitaxial layer has a thickness in the range of from 0.5 μm to 5 μm.
11. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type;
a substantially three-dimensional, U-shaped resistor having a base portion and a pair of leg portions forming an internal cavity;
a first insulating film disposed in the internal cavity of the resistor;
a second insulating film disposed on an outer surface of each of the leg portions of the resistor;
a pair of heavily-doped regions of the second conductivity type arranged on the respective leg portions of the resistor;
a first trench formed around the outer surfaces of the leg portions of the resistor and containing the second insulating film; and
a second trench formed in the cavity of the resistor and containing the first insulating film.
12. A semiconductor device according to claim 11 ; wherein the epitaxial layer has a thickness in the range of from 0.1 μm to 10 μm.
13. A semiconductor device according to claim 11 ; wherein the epitaxial layer has a specific resistance in the range of from 0.01 Ωcm to 150 Ωcm.
14. A semiconductor device according to claim 11 ; wherein the heavily-doped region is formed of BF 2 .
15. A semiconductor device according to claim 11 ; wherein the heavily-doped region has impurity concentration of at least 1E15 atm/cm 3 .
16. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type;
a plurality of resistors formed from an epitaxial layer disposed on the semiconductor substrate and having a second conductivity type different from the first conductivity type, each of the resistors having interior and exterior portions;
a plurality of first trenches formed on the respective exterior portions of the resistors;
a plurality of second trenches formed in the respective interior portions of the resistors;
a first insulating film disposed in the first trenches;
a second insulating film disposed in the second trenches; and
a heavily-doped region of the second conductivity type arranged at end portions of each of the resistors.
17. A semiconductor device according to claim 16 ; wherein each of the resistors has a substantially U-shaped configuration.
18. A semiconductor device according to claim 16 ; wherein the epitaxial layer has a thickness in the range of from 0.1 μm to 10 μm and a specific resistance in the range of from 0.01 Ωcm to 150 Ωcm.