Semiconductor composite device, method for manufacturing the semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head
View Patent ↗A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
1. A method for manufacturing a semiconductor composite apparatus in which a semiconductor thin film having a surface is bonded onto a metal layer formed on a substrate formed separately from the semiconductor thin film, the method comprising the steps of:
forming a metal oxide surface on the metal layer;
bringing the surface of the semiconductor thin film into intimate contact with the metal oxide surface; and
sintering the substrate and the semiconductor thin film in intimate contact with the substrate.
2. A method for manufacturing a semiconductor composite apparatus in which a semiconductor thin film is bonded onto a substrate formed separately from the semiconductor thin film, the semiconductor thin film having a surface on which a first metal layer is formed and the substrate having a surface on which a second metal layer is formed, the method comprising the steps of:
forming a metal oxide surface on at least one of the first metal layer and the second metal layer;
bringing the semiconductor thin film into intimate contact with the substrate such that the first metal layer is in intimate contact with the second metal layer with the metal oxide surface lying between the first metal layer and the second metal layer; and
sintering the substrate and the semiconductor thin film in intimate contact with the substrate.
3. A method for manufacturing a semiconductor composite apparatus in which a semiconductor thin film is bonded onto a substrate formed separately from the semiconductor thin film, the semiconductor thin film' having a surface on which a metal layer is formed and the substrate having a surface onto which the semiconductor thin film is bonded, the method comprising the steps of:
forming a metal oxide surface on the metal layer;
bringing the semiconductor thin film into intimate contact with the substrate such that the metal oxide surface is in intimate contact with the surface of the substrate with the metal oxide surface lying between the metal layer and the substrate; and
sintering the substrate and the semiconductor thin film in intimate contact with the substrate.
4. A method for manufacturing a semiconductor composite apparatus in which a semiconductor thin film is bonded onto a substrate formed separately from the semiconductor thin film, the semiconductor thin film having a first surface and the substrate having a second surface onto which the semiconductor thin film is bonded, the method comprising the steps of:
forming a metal layer on one of the first surface and the second surface;
forming a metal oxide surface on the metal layer;
bringing the semiconductor thin film into intimate contact with the substrate such that the first surface is in intimate contact with the second surface with a layer of water and the metal oxide surface lying between the semiconductor thin film and the substrate; and
sintering the substrate and the semiconductor thin film in intimate contact with the substrate.
5. A method for manufacturing a semiconductor composite apparatus in which a semiconductor thin film is bonded onto a substrate formed separately from the semiconductor thin film, the semiconductor thin film having a first surface and the substrate having a second surface onto which the semiconductor thin film is bonded, the method comprising the steps of:
forming a first metal layer on the first surface and the second metal layer on the second surface;
forming a metal oxide surface on at least one of the first metal layer and the second metal layer; and
bringing the semiconductor thin film into intimate contact with the substrate such that the first metal layer in intimate contact with the second metal layer with a layer of water and the metal oxide surface lying between the first metal layer and the second metal layer; and
sintering the substrate and the semiconductor thin film in intimate contact with the substrate.