Light emitting diode device and manufacturing method therof
View Patent ↗A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
1. A light-emitting diode device structure comprising:
a substrate;
a first type conductivity semiconductor layer disposed on the substrate having a first portion and a second portion;
an active layer disposed on the first portion;
a second type conductivity semiconductor layer disposed on the active layer;
a transparent conductive oxide stack structure having a plurality of transparent conductive layers and at least two resistant interfaces disposed on the second type conductivity semiconductor layer wherein any two adjacent layers of the plurality of transparent conductive layers having the same materials with different composition ratios; and
an electrode disposed on the transparent conductive oxide stack structure.
2. The light-emitting diode device structure according to claim 1 , wherein the transparent conductive oxide stack structure comprising:
a first transparent conductive layer having a first resistance disposed on the second type conductivity semiconductor layer;
a second transparent conductive layer having a second resistance disposed on the first transparent conductive layer, wherein a first resistant interface is formed between the first transparent conductive layer and the second transparent conductive layer; and
a third transparent conductive layer having a third resistance disposed on the second transparent conductive layer, wherein a second resistant interface is formed between the second transparent conductive layer and the third transparent conductive layer; wherein the second resistance is different from the first resistance and the third resistance.
3. The light-emitting diode device structure according to claim 1 , wherein the transparent conductive oxide stack structure can be indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), copper aluminum oxide, aluminum gallium oxide, aluminum strontium oxide or aluminum zinc oxide (AZO) or the combinations thereof.
4. The light-emitting diode device structure according to claim 1 , wherein the materials to form all of the layers of the transparent conductive oxide stack structure are the same.
5. A light-emitting diode device structure comprising:
a substrate having a top surface and a lower surface opposite to the top surface;
a second type conductivity semiconductor layer disposed on the top surface;
an active layer disposed on the second type conductivity semiconductor layer;
a first type conductivity semiconductor layer disposed on the active layer;
a transparent conductive oxide stack structure having a plurality of transparent conductive layers and at least two resistant interfaces disposed on the first type conductivity semiconductor layer wherein any two adjacent layers of the plurality of transparent conductive layers having the same materials with different composition ratios; and
an electrode disposed on the transparent conductive oxide stack structure.
6. The light-emitting diode device structure according to claim 5 , wherein the transparent conductive oxide stack structure comprising:
a first transparent conductive layer having a first resistance disposed on the first type conductivity semiconductor layer;
a second transparent conductive layer having a second resistance disposed on the first transparent conductive layer, wherein a first resistant interface is formed between the first transparent conductive layer and the second transparent conductive layer; and
a third transparent conductive layer having a third resistance disposed on the second transparent conductive layer, wherein a second resistant interface is formed between the second transparent conductive layer and the third transparent conductive layer; wherein the second resistance is different from the first resistance and the third resistance.
7. The light-emitting diode device structure according to claim 5 , wherein the transparent conductive oxide stack structure can be indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), copper aluminum oxide, aluminum gallium oxide, aluminum strontium oxide or aluminum zinc oxide (AZO) or the combinations thereof.
8. The light-emitting diode device structure according to claim 5 , wherein the materials to form all of the layers of the transparent conductive oxide stack structure are the same.
9. The light-emitting diode device structure according to claim 5 , further comprising:
an adhesion layer disposed on the top surface of the substrate;
a reflecting layer disposed on the adhesion layer; and
a contact layer disposed on the reflecting layer and contact with the second type conductivity semiconductor layer.
10. A light-emitting diode device structure comprising:
a substrate having a top surface and a lower surface opposite to the top surface;
a first transparent conductive oxide stack structure having a plurality of transparent conductive layers and at least two resistant interfaces disposed on the top surface of the substrate wherein any two adjacent layers of the plurality of transparent conductive layers having the same materials with different composition ratios;
a second type conductivity semiconductor layer disposed on the first transparent conductive oxide stack structure;
an active layer disposed on the second type conductivity semiconductor layer;
a first type conductivity semiconductor layer disposed on the active layer; and
an electrode disposed on the first type conductivity semiconductor layer.
11. The light-emitting diode device structure according to claim 10 , wherein the first transparent conductive oxide stack structure comprising:
a first transparent conductive layer having a first resistance disposed on the top surface of the substrate;
a second transparent conductive layer having a second resistance disposed on the first transparent conductive layer, wherein a first resistant interface is formed between the first transparent conductive layer and the second transparent conductive layer; and
a third transparent conductive layer having a third resistance disposed on the second transparent conductive layer, wherein a second resistant interface is formed between the second transparent conductive layer and the third transparent conductive layer; wherein the second resistance is different from the first resistance and the third resistance.
12. The light-emitting diode device structure according to claim 10 , further comprising a second transparent conductive oxide stack structure having at least two resistant interfaces disposed between the first type conductivity semiconductor layer and the electrode.
13. The light-emitting diode device structure according to claim 12 , wherein the second transparent conductive oxide stack structure is a multilayer stack structure comprising:
a fourth transparent conductive layer having a fourth resistance disposed on the first type conductivity semiconductor layer;
a fifth transparent conductive layer having a fifth resistance disposed on the fourth transparent conductive layer wherein a third resistant interface formed between the fourth transparent conductive layer and the fifth transparent conductive layer; and
a sixth transparent conductive layer having a sixth resistance disposed on the fifth transparent conductive layer wherein a fourth resistant interface formed between the fifth transparent conductive layer and the sixth transparent conductive layer; wherein the fifth resistance is different from the fourth resistance and the sixth resistance.
14. The light-emitting diode device structure according to claim 12 , wherein the first transparent conductive oxide stack structure and the second transparent conductive oxide stack structure can be indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), copper aluminum oxide, aluminum gallium oxide, aluminum strontium oxide or aluminum zinc oxide (AZO) or the combinations thereof.
15. The light-emitting diode device structure according to claim 12 , wherein the materials to form all of the layers of the first or second transparent conductive oxide stack structure are the same.
16. The light-emitting diode device structure according to claim 10 , further comprising:
an adhesion layer disposed on the top surface of the substrate;
a reflecting layer disposed on the adhesion layer; and
a contact layer disposed on the reflecting layer and contact with the first transparent conductive oxide stack structure.
17. A backlight module comprising:
a back bezel having a bottom side and a light extraction side;
a reflector disposed between the bottom side and the light extraction side;
a light source disposed between the reflector and the light extraction side comprising the light-emitting diode device structure according to claim 5 ; and
an optical film disposed between the light source and the light extraction side.
18. A lighting device comprising:
a light source comprising the light-emitting diode device structure according to claim 5 ;
a power supplement system electrically adhering to the light source; and
a control element electrically adhering to the power supplement system to control the current to the light source.