Method for manufacturing semiconductor device
The present invention provides a method for manufacturing a semiconductor device which has an integrated circuit provided on a semiconductor substrate and a movable part which is movable relative to the substrate. This manufacturing method includes: a step of covering the movable part with a sacrificial film; a step of covering the sacrificial film with a first sealing layer which is formed of a material having a tensile stress; a step of forming a through-hole in the first sealing layer; a step of removing the sacrificial film through the through-hole to form a void around the movable part; and a step of film-forming a second sealing layer on the first sealing layer to close the through-hole.
1 . A method for manufacturing a semiconductor device, which has an integrated circuit provided on a semiconductor substrate and a movable part which is movable relative to the substrate, comprising:
covering the movable part with a sacrificial film;
covering the sacrificial film with a first sealing layer which is formed of a material having a tensile stress;
forming a through-hole in the first sealing layer;
removing the sacrificial film through the through-hole to form a void around the movable part; and
forming a second sealing layer on the first sealing layer to close the through-hole.
2 . The method for manufacturing a semiconductor device according to claim 1 , wherein
the semiconductor device is a micro electro mechanical system.
3 . The method for manufacturing a semiconductor device according to claim 1 , wherein
the first sealing layer is film-formed by an AP-CVD method using O 3 and TEOS.
4 . The method for manufacturing a semiconductor device according to claim 1 , wherein
the second sealing layer is film-formed by sputtering.
5 . The method for manufacturing a semiconductor device according to claim 1 , wherein
the second sealing layer is formed of aluminum.
6 . The method for manufacturing a semiconductor device according to claim 1 , wherein
the first sealing layer has a multilayer structure including at least two layers, and the multilayer structure includes a layer film-formed by the AP-CVD method using O 3 and TEOS and a layer film-formed by a plasma CVD method.
7 . The method for manufacturing a semiconductor device according to claim 6 , wherein
the multilayer structure has three layers, and a layer film-formed by the plasma CVD method, a layer film-formed by the AP-CVD method using O 3 and TEOS, and a layer film-formed by the plasma CVD method are sequentially stacked.
8 . The method for manufacturing a semiconductor device according to claim 6 , wherein
the total thickness of the layers film-formed by the plasma CVD method is not more than a half of the thickness of the layer film-formed by the AP-CVD method using O 3 and TEOS.
9 . The method for manufacturing a semiconductor device according to claim 7 , wherein
the total thickness of the layers film-formed by the plasma CVD method is not more than a half of the thickness of the layer film-formed by the AP-CVD method using O 3 and TEOS.