Method for manufacturing semiconductor device
The present invention provides a method for manufacturing a semiconductor device includes: a immersion process of immersing, in a fluoronitric acid solution, a lamination substrate, in which an SiC substrate formed of a silicon carbide (SiC) single crystal is applied to a silicon substrate or a quarts substrate with a larger hole diameter than the SiC substrate; and a peeling process of taking out the SiC substrate which is not dissolved and remains in the fluoronitric acid solution after the silicon substrate or the quartz substrate is dissolved and removed from the fluoronitric acid solution.
1 . A method for manufacturing a semiconductor device comprising:
immersing, in a fluoronitric acid solution, a lamination substrate, in which an SiC substrate formed of a silicon carbide (SiC) single crystal is applied to a silicon substrate or a quarts substrate with a larger hole diameter than the SiC substrate; and
removing the SiC substrate which is not dissolved and remains in the fluoronitric acid solution after the silicon substrate or the quartz substrate is dissolved and removed from the fluoronitric acid solution.
2 . The method for manufacturing a semiconductor device according to claim 1 , further comprising:
before the immersion step, covering an exposed surface of the SiC substrate by a protective film which is not dissolved in the fluoronitric acid solution.
3 . The method for manufacturing a semiconductor device according to claim 1 , further comprising:
before the immersion step, covering an exposed surface of the SiC substrate by a protective film which is not dissolved in the fluoronitric acid solution and a step of placing a transparent substrate or a transparent sheet, which is not dissolved in the fluoronitric acid solution, on the protective film so that the SiC substrate is sandwiched between the transparent substrate and the silicon substrate or the quartz substrate.
4 . The method for manufacturing a semiconductor device according to claim 2 , wherein
the protective film which is not dissolved in the fluoronitric acid solution is a wax.
5 . The method for manufacturing a semiconductor device according to claim 3 , wherein
the transparent substrate which is not dissolved in the fluoronitric acid solution is a sapphire substrate.
6 . The method for manufacturing a semiconductor device according to claim 3 , wherein
the transparent sheet which is not dissolved in the fluoronitric acid solution is a polytetrafluoroethylene sheet.
7 . The method for manufacturing a semiconductor device according to claim 1 , further comprising:
after removing the SiC substrate, dicing the SiC substrate into individual chips.