CMOS image sensor and method for manufacturing the same
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
1. A CMOS image sensor comprising:
a transparent substrate including an active area, having a photodiode region and a transistor region, the transparent substrate further including a field area for isolation of the active area;
a black matrix layer on a rear surface of the transparent substrate corresponding to the field area and the active area excluding the photodiode region:
a color filter layer formed on a rear surface of the photodiode region;
a p-type semiconductor layer only on the active area but not on the field area of the transparent substrate on which the black matrix layer is formed;
a photodiode in the p-type semiconductor layer corresponding to the photodiode region; and
a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
2. The CMOS image sensor of claim 1 , further comprising an insulating layer between the p-type semiconductor layer and the transparent substrate including the black matrix layer and the color filter layer.
3. The CMOS image sensor of claim 1 , wherein the transparent substrate is formed of a glass substrate or a quartz substrate.
4. The CMOS image sensor of claim 1 , wherein the black matrix layer is formed of a metal material or a black resin to shield light.
5. The CMOS image sensor of claim 1 , wherein the p-type semiconductor layer is formed in the active area.
6. The CMOS image sensor of claim 1 , wherein the p-type semiconductor layer is formed of a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions.
7. The CMOS image sensor of claim 1 , wherein the photodiode includes:
an n-type impurity region formed by implanting n-type impurity ions into the p-type semiconductor layer; and
a p-type impurity region formed in the surface of the n-type impurity region.
8. The CMOS image sensor of claim 1 , wherein the plurality of transistors include:
a plurality of gate electrodes formed with a gate insulating layer on the p-type semiconductor layer corresponding to the transistor region; and
a source region and a drain region on the p-type semiconductor layer between each of the plurality of gate electrodes.
9. The CMOS image sensor of claim 1 , further comprising:
an insulating interlayer on a surface of the transparent substrate including the plurality of transistors and the photodiode; and
a metal line on the insulating interlayer.
10. A CMOS image sensor comprising:
a transparent substrate including an active area having a photodiode and a transistor regions the transparent substrate further including a field area for isolation of the active area;
a black matrix layer on the transparent substrate corresponding to the field area and the active area excluding the photodiode region;
a color filter layer formed on the same surface as the black matrix layer of the photodiode region;
a p-type semiconductor layer only on the active area but not on the field area of the transparent substrate on which the black matrix layer is formed;
a photodiode in the p-type semiconductor layer corresponding to the photodiode region; and
a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.
11. A CMOS image sensor comprising:
a transparent substrate including an active area having a photodiode and a transistor regions the transparent substrate further including a field area for isolation of the active area;
a color filter layer on a rear surface of the transparent substrate corresponding to the photodiode region;
a black matrix layer on the transparent substrate corresponding to the field area and the active area excluding the photodiode region;
a p-type semiconductor layer only on the active area but not on the field area of the transparent substrate on which the black matrix layer is formed;
a photodiode in the p-type semiconductor layer corresponding to the photodiode region; and
a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.