Method for washing device substrate
View Patent ↗The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.
1. A method for washing a device substrate, which comprises removing a resist attached to a device substrate by washing said device substrate with a solvent, wherein the solvent is a composition comprising a fluorinated alcohol and 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane.
2. The method for washing a device substrate according to claim 1 , wherein the resist is an acrylic resin-type ArF resist.
3. The method for washing a device substrate according to claim 1 , wherein the fluorinated alcohol is a compound of the following formula (1): C a H b F d X e OH (1) wherein X is a halogen atom other than a fluorine atom, each of a and d is an integer of at least 1, and each of b and e is an integer of at least 0, provided that b+d+e=2a+1.
4. The method for washing a device substrate according to claim 3 , wherein the fluorinated alcohol is 2,2,2-trifluoroethanol.
5. The method for washing a device substrate according to claim 1 , wherein the content of the fluorinated alcohol is from 1 to 60 mass % in the composition.
6. A method for washing a device substrate, which comprises removing a resist attached to a device substrate by washing the device substrate with a solvent, wherein the solvent is a composition comprising 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane and 2,2,2-trifluoroethanol.
7. The method for washing a device substrate according to claim 6 , wherein the mass ratio of the 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane to the 2,2,2-trifluoroethanol is 89/11.
8. A method for washing a device substrate, which comprises removing a resist attached to a device substrate by washing the device substrate with a solvent, wherein the solvent is a composition comprising 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane and 2,2,3,3-tetrafluoropropanol.
9. A method for washing a device substrate, which comprises removing a resist attached to a device substrate by washing the device substrate with a solvent, wherein the solvent is a composition comprising 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane and 2,2,3,3,4,4,5,5-octafluoropentanol.
10. The method for washing a device substrate according to claim 1 , wherein the solvent is used in a supercritical state.
11. The method for washing a device substrate according to claim 1 , wherein the washing is first carried out by using the solvent in a liquid state, and then washing is carried out by using the solvent in a supercritical state.
12. The method for washing a device substrate according to claim 1 , which includes, after the washing, rinsing with the above solvent or a hydrofluoroether.
13. The method for washing a device substrate according to claim 6 , wherein the mass ratio of the 1,1,2,2-tetrafluoro-1-(2,2,2-trifluoroethoxy)ethane to the 2,2,2-trifluoroethanol is from 70/30 to 95/5.
14. The method for washing a device substrate according to claim 6 , wherein the resist is an acrylic resin-type ArF resist.
15. The method for washing a device substrate according to claim 6 , wherein the solvent is used in a supercritical state.
16. The method for washing a device substrate according to claim 6 , wherein the washing is first carried out by using the solvent in a liquid state, and then washing is carried out by using the solvent in a supercritical state.
17. The method for washing a device substrate according to claim 6 , which includes, after the washing, rinsing with the above solvent or a hydrofluoroether.