Semiconductor device
View Patent ↗In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
1. A method of manufacturing a semiconductor device comprising the steps of:
preparing a semiconductor substrate;
forming a plurality of gate electrodes on said semiconductor substrate;
forming a first insulating film over said semiconductor substrate and said gate electrodes;
forming a silicon oxynitride film over said first insulating film;
forming a plurality of metal wirings on said silicon oxynitride film;
forming a second insulating film formed over and between said metal wirings, wherein
said silicon oxynitride film is a plane film and,
said second insulating film is formed by bias-applied plasma CVD using source gas containing hydrogen atoms; and
forming a plurality of contact plugs in said first insulating film and said silicon oxynitride film after forming said silicon oxynitride film and before forming said metal wirings, wherein
each of said contact plugs is connected to each of said metal wirings in the step of forming said metal wirings.
2. The method of manufacturing the semiconductor device according to claim 1 , wherein,
one of said metal wirings is connected to said semiconductor substrate via one of said contact plugs, and another of said metal wirings is connected to one of said gate electrodes via another of said contact plugs.
3. The method of manufacturing the semiconductor device according to claim 1 , wherein
forming said plurality of contact plugs includes the steps of;
etching said silicon oxynitride film to form a first contact hole;
etching said first insulating film as a silicon oxide film to form a second contact hole which is continuous to the first contact hole; and
forming said contact plugs in the first contact hole and said second contact hole, wherein
a bottom surface of each of said metal wirings is directly contacted to an upper surface of said silicon oxynitride film.
4. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film is formed immediately under said metal wirings.
5. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film is formed immediately over an etch stopper film of said gate electrodes.
6. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film is formed between the first insulating film and a third insulating film, wherein
said third insulating film is formed between said silicon oxynitride film and said metal wirings.
7. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film is formed by plasma CVD.
8. The method of manufacturing the semiconductor device according to claim 7 , wherein said silicon oxynitride film is formed using source gas containing either N 2 O or O 2 , and SiH 4 .
9. The method of manufacturing the semiconductor device according to claim 8 , wherein said silicon oxynitride film comprises Si of 34 atomic % to 40 atomic %, O of 48 atomic % to 60 atomic %, and N of 5 atomic % to 12 atomic %.
10. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film is subjected to heat treatment at a temperature of not lower than 450° C.
11. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film has H in Si—H bonds of not more than 8×10 21 atoms/cm 3 by Fourier transform infrared (FT-IR) spectroscopy.
12. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film has N, B, P or As introduced therein.
13. The method of manufacturing the semiconductor device according to claim 1 , wherein in said silicon oxynitride film, H in Si—H bonds is not more than 1×10 21 atoms/cm 3 by FT-IR spectroscopy, a peak of Si—O bonds is at a wave number of not less than 1020 cm −1 and not more than 1075 cm −1 by FT-IR spectroscopy, and no peak of Si—N bonds at wave number: 835 cm −1 is detected by FT-IR spectroscopy.
14. The method of manufacturing the semiconductor device according to claim 13 , wherein said silicon oxynitride film has tensile stress.
15. The method of manufacturing the semiconductor device according to claim 1 , wherein said silicon oxynitride film has a thickness of not less than 100 nm and not more than 600 nm.
16. The method of manufacturing the semiconductor device according to claim 1 , wherein said second insulating film is formed by high-density plasma CVD.
17. The method of manufacturing the semiconductor device according to claim 1 , wherein a plurality of layers of said metal wirings and a plurality of layers of said second insulating films are formed.
18. The method of manufacturing the semiconductor device according to claim 1 , including a tunnel insulating film, a control electrode, a floating electrode, and a first metal interconnection, wherein the first metal interconnection has a ratio H/W of a height H of the interconnection to a distance W between the neighboring interconnections, and the ratio H/W is not less than 1.0.
19. The method of manufacturing the semiconductor device according to claim 1 , wherein said metal wiring has a ratio H/W of a height H of the interconnection to a distance W the neighboring interconnections, and the ratio H/W is not less than 1.0.