Magnetic head having reduced cost electrostatic discharge shunt
View Patent ↗A method for manufacturing a magnetic head with an electrostatic discharge resistor for preventing electrostatic discharge damage to magnetic head. The electrostatic discharge resistor is formed by a processes that saves manufacturing time and cost by forming resistor in the same deposition and patterning steps used to form the magnetoresistive sensor. However, the resistor includes only a portion of the layers used to form the magnetoresistive sensor, thereby ensuring that the resistor will have sufficient resistivity.
1. A magnetic head for use in a data recording system, the magnetic head comprising:
a slider body;
a magnetoresistive sensor formed on the slider body, the magnetoresistive sensor comprising a plurality of layers;
an electrostatic discharge resistor formed on the slider body, the electrostatic discharge being formed of one or more material layers that are formed of the same material as and in a common plane with only a portion of the plurality of layers of the magnetoresistive sensor; and
first and second magnetic shields, the magnetoresistive sensor being sandwiched between the first and second magnetic shields, and wherein the electrostatic discharge resistor is electrically connected with at least one of the first and second magnetic shields and also with the slider body;
the magnetoresistive sensor comprising a seed layer structure, wherein the seed layer structure includes a layer of Ta and a layer of Ru.
2. A magnetic head as in claim 1 further comprising a write head formed on the slider body, the electrostatic discharge resistor being electrically connected with the slider body and the write head.
3. A magnetic head as in claim 1 further comprising a write head including a magnetic pole, and wherein the electrostatic discharge resistor is electrically connected with the magnetic pole and with the slider body.
4. A magnetic head for magnetic data recording, comprising:
a slider body;
a magnetoresistive sensor formed on the slider body, the magnetoresistive sensor further comprising:
a seed layer structure;
a layer of antiferromagnetic material formed over the seed layer structure;
a non-magnetic layer formed over the layer of antiferromagnetic material; and
a magnetic free layer formed over the non-magnetic layer; and
an electrostatic discharge resistor formed of the same material as and in a common plane with the seed layer structure;
wherein the electrostatic discharge resistor consists of the same material as the seed layer structure and the layer of antiferromagnetic layer and has a thickness not greater than the combined thicknesses of the seed layer structure and the layer of antiferromagnetic layer.
5. A sensor as in claim 4 wherein the seed layer structure includes a layer of Ta.
6. A sensor as in claim 4 wherein the seed layer structure includes a layer of Ru.
7. A sensor as in claim 4 wherein the seed layer structure includes a layer of Ta and a layer or Ru formed over the layer of Ta.
8. A sensor as in claim 4 wherein the electrostatic discharge resistor consists of the same material as the seed layer structure and has a thickness not greater than that of the seed layer structure.