Method for manufacture of semiconductor bearing thin film material
View Patent ↗A method for forming a semiconductor bearing thin film material. The method includes providing a metal precursor and a chalcogene precursor. The method forms a mixture of material comprising the metal precursor, the chalcogene precursor and a solvent material. The mixture of material is deposited overlying a surface region of a substrate member. In a specific embodiment, the method maintains the substrate member including the mixture of material in an inert environment and subjects the mixture of material to a first thermal process to cause a reaction between the metal precursor and the chalcogene material to form a semiconductor metal chalcogenide bearing material overlying the substrate member. The method then performs a second thermal process to remove any residual solvent and forms a substantially pure semiconductor metal chalcogenide thin film material overlying the substrate member.
1. A method for forming semiconductor bearing thin film material, the method comprising:
providing a zinc-containing precursor;
providing a sulfur-containing precursor;
forming a mixture of material comprising the zinc-containing precursor, the sulfur-containing precursor and a solvent material;
depositing the mixture of material overlying a surface region of a substrate member,
maintaining the substrate member including the mixture of material in an inert environment;
subjecting the mixture of material to a first thermal process to form a semiconductor zinc-sulfide containing thin film material overlying the surface region of the substrate member; and
subjecting the semiconductor zinc-sulfide containing thin film material to a second thermal process to form a substantially pure semiconductor thin film material consisting of zinc sulfide, wherein the zinc sulfide comprises a bandgap energy of about 94.6% or greater compared to a bulk zinc sulfide film.
2. The method of claim 1 wherein the solvent material is selected from the group consisting of ethanol, ethanolamine, methoxyethanol, tetrahydrofuran, and ethylene glycol.
3. The method of claim 1 wherein the first thermal process is provided at a temperature ranging from about 80 Degree Celsius to about 90 Degree Celsius.
4. The method of claim 1 wherein the inert environment is provided using nitrogen, argon, or helium.
5. The method of claim 1 wherein the second thermal process is provided at a temperature of about 300 Degree Celsius and higher.
6. The method of claim 1 wherein the depositing step comprises a solution deposition process including a spin on process, a doctor blade process, a dip coating process, a spraying process, an screen printing process, or an inkjet process.
7. The method of claim 1 wherein the substrate member is a transparent substrate.
8. The method of claim 7 wherein the transparent substrate is selected from glass, fused silica, and quartz.
9. The method of claim 1 wherein the substrate member is a metal.
10. The method of claim 9 wherein the substrate member is a metal selected from stainless steel, aluminum, and nickel.
11. The method of claim 1 wherein the substrate member is a semiconductor material selected from silicon, silicon germanium, germanium, II-VI compound semiconductors, III-V compound semiconductors, and silicon on insulator.
12. The method of claim 1 wherein the substrate member is a multilayer material.
13. The method of claim 1 wherein the substrate member is a polymer.
14. The method of claim 1 wherein the zinc precursor is selected from zinc acetate, zinc methacrylate, zinc acrylate, zinc acetylacetonate, zinc chloride, and zinc nitrate.
15. The method of claim 1 wherein the sulfur precursor is selected from thiourea, thiols, thioethers, thioaceamides, and thiosulfates.
16. The method of claim 1 wherein the solvent material comprises methoxyethanol and ethanolamine.
17. The method of claim 1 wherein the zinc sulfide material is characterized by a bandgap of about 3.66 eV.