SEMICONDUCTOR DEVICE AND INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE
The present invention provides a semiconductor device that includes a plurality of transistor cells and makes it possible to achieve higher degree of integration and lower cost of an integrated semiconductor circuit device as the first object, and provide an integrated semiconductor circuit device of high density integration and compact construction at a low cost. The semiconductor device includes a plurality of transistor cells each comprising the first layer, the base layer and the second layer formed in this order on the substrate, one of the first layer and the second layer serving as the collector layer and the other serving as the emitter layer, and the first electrode connected to the first layer of each of the transistor cells is formed in the etching trench formed in the first layer, wherein the etching trench has normal mesa surface on the side thereof in the longitudinal direction, and the first electrodes of the plurality of transistor cells are connected each other through a collective wiring that is provided so as to cross the normal mesa surfaces of the trenches of the plurality of transistor cells.
1 . A semiconductor device comprising a plurality of transistor cells each comprising a first layer, a base layer and a second layer formed in this order on a substrate, one of said first layer and said second layer serving as a collector layer and the other serving as an emitter layer, a first electrode connected to said first layer of each of said transistor cells being formed in an etching trench formed in said first layer, wherein
said etching trench has normal mesa surface on the side along the longitudinal direction thereof, and said first electrodes of said plurality of transistor cells are connected each other through a collective wiring that is provided so as to cross said normal mesa surfaces of said trenches of said plurality of transistor cells.
2 . A semiconductor device comprising a plurality of transistor cells each comprising a first layer, a base layer and a second layer formed in this order on a substrate, one of said first layer and said second layer serving as a collector layer and the other serving as an emitter layer, a first electrode connected to said first layer of each of said transistor cells being formed in an etching trench formed in said first layer, wherein
said etching trenches provided between adjacent transistor cells are connected each other thorough a second etching trench provided in said first layer, and said first electrodes provided between the plurality of transistor cells are connected each other through a second electrode disposed in said second etching trench.
3 . The semiconductor device according to claim 1 or 2 , wherein at least one of said substrate, said first layer, said base layer and said second layer is made of a compound semiconductor.
4 . The semiconductor device according to claim 3 , wherein said first layer is made of GaAs, and the longitudinal direction of said etching trench is parallel to [01-1] orientation of said first layer.
5 . The semiconductor device according to any one of claims 1 to 4 , wherein said first layer consists of collector layer and a sub-collector layer, said etching trench penetrates through said collector layer, and said first electrode contacts with said sub-contact layer.
6 . An integrated semiconductor circuit device, comprising:
a first semiconductor device according to any one of claims 1 to 5 ; and
a second semiconductor device including a plurality of second transistor cells formed on the same substrate as that of said transistor cells of said first semiconductor device,
wherein said second transistor cells have an etching trench rotated by about 90 degrees in a plane parallel to the substrate relative to the etching trench of the transistor cells of said first semiconductor device.