Semiconductor memory and memory system
View Patent ↗A plurality of cell arrays are assigned different addresses. An access information unit holds access enable information indicating the number of the cell arrays to be simultaneously activated. An array control unit activates at least one of the cell arrays corresponding to the access enable information, in response to an access request, and forcibly activates at least one of the cell arrays not corresponding to the access enable information, in response to a forced access request. Consequently, it is possible to activate the inactivated cell array not corresponding to the access enable information before the supply of the access request. Therefore, even when the number of the cell arrays to be simultaneously activated is small, it is possible to execute access operations without interruption. As a result, it is possible to access the cell arrays with minimum power consumption without lowering access efficiency.
1. A semiconductor memory comprising:
a plurality of cell arrays that includes memory cells and assigned different addresses;
an access information unit that stores access enable information indicating a number of the cell arrays to be simultaneously activated; and
an array control unit that activates at least one of the cell arrays corresponding to the access enable information set in the access information unit, in response to an access request when a forced access request is not received from an exterior of the semiconductor memory, and forcibly activates at least one of the cell arrays indicated by an address supplied with the forced access request irrespective of the access enable information set in the access information unit, when the forced access request is received.
2. The semiconductor memory according to claim 1 , further comprising
an access detection unit which detects in advance that access to one of the cell arrays not corresponding to the access enable information is executed following access to one of the cell arrays corresponding to the access enable information, when accesses to the cell arrays are continuously executed, wherein
the array control unit forcibly activates one of the cell arrays not corresponding to the access enable information in response to a detection of the access detection unit to execute an access operation.
3. The semiconductor memory according to claim 2 , further comprising
an address counter operating during a burst mode in which the memory cells are accessed and generating internal access address subsequent to an external access address, wherein
the access detection unit executes a detecting operation based on the external access address and the internal access address during the burst mode.
4. The semiconductor memory according to claim 2 , further comprising
a detection terminal outputting a detection signal indicating that the access operation of one of the cell arrays not corresponding to the access enable information is executed in response to the detection of the access detection unit.
5. The semiconductor memory according to claim 1 , further comprising
a command input unit receiving an access command for accessing the memory cells and receiving the forced access request as a command, wherein
the array control unit forcibly activates at least one of the cell arrays not corresponding to the access enable information, in response to the forced access request received at the command input unit.
6. The semiconductor memory according to claim 1 , further comprising
a forced access request terminal receiving the forced access request, wherein
the array control unit forcibly activates at least one of the cell arrays not corresponding to the access enable information, in response to the forced access request received at the forced access request terminal.
7. The semiconductor memory according to claim 1 , further comprising
a command input unit receiving an access command for accessing the memory cells, and receiving the access enable information as a register set command, wherein
the access information unit is set according to the register set command.
8. The semiconductor memory according to claim 7 , wherein
the access information unit is set according to at least one of an address and data supplied to external terminals in accordance with the register set command.
9. The semiconductor memory according to claim 1 , wherein
the access information unit includes a fuse circuit in which the access enable information is programmed.
10. The semiconductor memory according to claim 1 , wherein:
the access information unit includes a switch having a conductive pattern which is formed on a substrate of the semiconductor memory so as to match a pattern shape of a photo mask used in a semiconductor manufacturing process; and
the switch sets the access enable information indicating the number of the cell arrays to be simultaneously activated, according to a voltage value of a coupling destination of the conductive pattern.
11. The semiconductor memory according to claim 1 , further comprising
a plurality of banks each having the cell arrays and each operating independently of one another, wherein:
the access information unit holds the access enable information for the cell arrays of each of the banks; and
the array control unit is provided for each of the banks, and in response to the forced access request supplied for each of the banks, forcibly activates at least one of the cell arrays not corresponding the access enable information set in the access information unit.
12. The semiconductor memory according to claim 11 , further comprising
a command input unit receiving an access command for accessing the memory cells, and receiving the access enable information as a register set command, wherein
the register set command includes information indicating whether to set the access enable information separately for each of the banks or collectively for all the banks.
13. A memory system comprising a semiconductor memory and a controller accessing the semiconductor memory, wherein
the semiconductor memory comprises:
a plurality of cell arrays having memory cells and assigned different addresses;
an access information unit in which access enable information indicating a number of the cell arrays to be simultaneously activated is set;
an access detection unit which detects in advance that access to one of the cell arrays not corresponding to the access enable information is executed following access to one of the cell arrays corresponding to the access enable information, when accesses to the cell arrays are continuously executed; and
an array control unit which activates at least one of the cell arrays corresponding to the access enable information set in the access information unit, in response to an access request, and forcibly activates at least one of the cell arrays not corresponding to the access enable information set in the access information unit, in response to a detection of the access detection unit; and
a detection terminal outputting a detection signal indicating that an access operation of one of the cell arrays not corresponding to the access enable information is executed, to an exterior of the semiconductor memory in response to the detection of the access detection unit; and wherein
the controller includes a control unit which determines whether to execute or stop the access operation of one of the cell arrays not corresponding to the access enable information of the semiconductor memory, in response to the detection signal.