Semiconductor light emitting device

1. A semiconductor light emitting device having:

a device body made of a group III nitride semiconductor, the device body including

an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer stacked between the n-type semiconductor layer and the p-type semiconductor layer,

the device body being located on a conductive substrate, wherein the conductive substrate has a major surface defined by a nonpolar plane, and a contact portion of the device body with an n-type electrode includes a crystal plane different from the major surface, wherein the contact portion includes a corrugated surface, and the corrugated surface includes a top surface defined by an m-plane and a side surface defined by a polar plane.

2. The semiconductor light emitting device according to claim 1 , wherein the contact portion includes a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.

3. The semiconductor light emitting device according to claim 2 , wherein the protrusions have side faces defined by polar planes.

4. The semiconductor light emitting device according to claim 2 , wherein sections of the protrusions perpendicular to the longitudinal direction are rectangularly formed, each of the protrusions has a top face defined by a nonpolar plane and a pair of parallel side faces extending downward from both sides of the top face, and the pair of side faces are defined by polar planes.

5. The semiconductor light emitting device according to claim 2 , wherein the n-type electrode is in contact with the top face, the pair of side faces, and a groove bottom surface of the contact portion between each adjacent pair of the protrusions.

6. The semiconductor light emitting device according to claim 4 , further including a recess formed between each adjacent pair of the protrusions, wherein

a width x of each protrusion and a depth y of the recess satisfy x/y≦10.

7. The semiconductor light emitting device according to claim 4 , further including a recess formed between each adjacent pair of the protrusions, wherein

a width x of each protrusion and a width z of the recess satisfy 0.1≦x/z≦10.

8. The semiconductor light emitting device according to claim 4 , further including a recess formed between each adjacent pair of the protrusions, wherein

a depth y and a width z of the recess satisfy y/z≦2.

9. The semiconductor light emitting device according to claim 4 , further including a recess formed between each adjacent pair of the protrusions, wherein

a width x of each protrusion and a depth y of the recess satisfy x/y≦10, the width x of each the protrusion and a width z of the recess satisfy 0.1≦x/z≦10, and the depth y and the width z of the recess satisfy y/z≦2.

10. The semiconductor light emitting device according to claim 1 , wherein the contact portion includes a region formed by arranging a plurality of protrusions.

11. The semiconductor light emitting device according to claim 10 , wherein the protrusions include block-shaped protrusions in a form of rectangular parallelepiped.

12. The semiconductor light emitting device according to claim 11 , wherein each of the block-shaped protrusions has a rectangular top face and four side faces connected to the top face, and a parallel pair of the side faces are defined by polar planes.

13. The semiconductor light emitting device according to claim 1 , wherein

the device body includes a conductive group III nitride semiconductor substrate having a major surface defined by a nonpolar plane and a group III nitride semiconductor crystal grown on the surface of the conductive group III nitride semiconductor substrate, and

a back surface of the conductive group III nitride semiconductor substrate is employed as the contact portion with the n-type electrode.