IP Library Granted Patent US 7,854,050
Granted Patent B2
US 7,854,050 · App. 12/239,525 · Granted Dec 21, 2010

Method of manufacturing a surface acoustic wave device

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Quick Facts
Patent No.
US 7,854,050
App. No.
12/239,525
Granted
Dec 21, 2010
Kind
B2
Abstract

A surface acoustic wave device is enable to prevent electrode erosion, without any specific environmental process. The surface acoustic wave device includes a piezoelectric substrate, an electrode for the formation of surface acoustic wave, being formed on the piezoelectric substrate, on the piezoelectric substrate, a frame-shaped layer surrounding the electrode for the formation of surface acoustic wave, and a lid body formed on the frame-shaped layer by bonding, so as to form a hollow portion between the lid body and the electrode for the formation of surface acoustic wave. The frame-shaped layer and the lid body include photosensitive resin, and the lid body includes a through hole, and the through hole is sealed with a halogen-free thermosetting resin.

Claims (18)

1. A manufacturing method of a surface acoustic wave device comprising the steps of:

on a piezoelectric substrate, forming an electrode for a formation of the surface acoustic wave;

forming a frame-shaped layer surrounding the electrode for the formation of the surface acoustic wave being formed on the piezoelectric substrate;

on the frame-shaped layer, forming a lid body by bonding, having a through hole, so as to form a hollow between the lid body and the electrode for formation of the surface acoustic wave;

removing a halogen gas generated from the frame-shaped layer and the lid body via the through hole, by heating in a vacuum in a state of being bonded with the lid body; and

after removing the halogen gas, sealing the through hole with a halogen-free thermosetting resin.

2. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of removing the halogen gas via the through hole includes heating in the vacuum after retaining in an environment of high humidity and high temperature for a predetermined time.

3. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of removing the halogen gas via the through hole includes processing in H 2 O plasma.

4. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of forming the frame-shaped layer includes a step of spin coating a photosensitive negative resist.

5. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of forming the hollow by forming the lid body by bonding includes a step of forming a film-shaped photosensitive negative resist on the frame-shaped layer.

6. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of sealing the through hole includes a step of printing a paste-form halogen-free thermosetting resin inside the through hole.

7. The manufacturing method of the surface acoustic wave device according to claim 1 ,

wherein the step of sealing the through hole includes a step of forming a film-shaped halogen-free thermosetting resin on the lid body.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2010
From: TAIYO YUDEN MOBILE TECHNOLOGY CO., LTD.
To: TAIYO YUDEN CO., LTD.
Reel/Frame 025095/0893 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 6, 2010
From: FUJITSU MEDIA DEVICES LIMITED
To: TAIYO YUDEN MOBILE TECHNOLOGY CO., LTD.
Reel/Frame 025095/0167 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2008
From: AIKAWA, SHUNICHI; KOORIIKE, TAKUMI; KIMURA, JYOUJI
To: FUJITSU MEDIA DEVICES LIMITED
Reel/Frame 021605/0309 →