Organic light emitting diode display and method for manufacturing the same
View Patent ↗An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.
1. An organic light emitting diode (OLED) display comprising:
a gate line;
a data line intersecting the gate line;
a switching thin film transistor connected to the gate line and the data line;
a driving thin film transistor connected to the switching thin film transistor; and
a light emitting diode (LED) connected to the driving thin film transistor,
wherein the switching thin film transistor includes
a control electrode connected to the gate line,
a crystalline semiconductor overlapping the control electrode, and
an input electrode and an output electrode spaced apart from each other on the crystalline semiconductor,
wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.
2. The OLED display of claim 1 , wherein
the gate line includes a metal having a melting point less than that of the control electrode.
3. The OLED display of claim 2 , wherein
the gate line includes one selected from an aluminum-containing metal, a copper-containing metal, and a silver-containing metal, and
the control electrode includes one selected from a molybdenum-containing metal, a chromium-containing metal, a titanium-containing metal, a tantalum-containing metal, and a tungsten-containing metal.
4. The OLED display of claim 2 , wherein
the light emitting diode (LED) comprises:
a first electrode connected to the driving thin film transistor;
a second electrode facing the first electrode; and
a light emitting member disposed between the first electrode and the second electrode,
wherein the first electrode is disposed on the same layer as the gate line.
5. The OLED display of claim 4 , wherein
the first electrode includes a first layer including a metal and a second layer including a transparent conductive material, and
the second layer contacts the light emitting member.
6. The OLED display of claim 4 , further comprising a voltage assistant line connected to the second electrode and formed on the same layer as the first electrode and the gate line.
7. The OLED display of claim 6 , further comprising
an organic insulating layer formed on the first electrode,
wherein the organic insulating layer has an opening defining the light emitting member and a contact hole exposing the voltage assistant line.
8. The OLED display of claim 2 , wherein
the light emitting diode (LED) comprises:
a first electrode connected to the driving thin film transistor;
a second electrode spaced apart from the first electrode;
a light emitting member disposed between the first electrode and the second electrode, and
a first protecting member formed on a same layer as the first electrode and covering the gate line.
9. The OLED display of claim 8 , further comprising
a connecting member connecting the driving thin film transistor and the switching thin film transistor, and formed on the same layer as the gate line.
10. The OLED display of claim 9 , further comprising
a second protecting member formed on the same layer as the first electrode and covering the connecting member.
11. A method for manufacturing an OLED display, comprising:
depositing a first metal layer on a substrate;
patterning the first metal layer by photolithography to form a control electrode;
depositing an amorphous semiconductor on the control electrode;
crystallizing the amorphous semiconductor;
forming an insulating layer having a contact hole on the crystallized semiconductor;
depositing a second metal layer on the insulating layer; and
patterning the second metal layer by photolithography to form a gate line connected to the control electrode through the contact hole,
wherein the first metal layer has a higher melting point than a temperature for crystallizing the amorphous semiconductor, and the second metal layer has a lower melting point than that of the first metal layer.
12. The method of claim 11 , wherein
a pixel electrode separated from the gate line is formed in the forming of the gate line.