IrOx nanostructure electrode neural interface optical device
View Patent ↗An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO 2 , SiN, TiO 2 , or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.
1. An optical device with an iridium oxide (IrOx) electrode neural interface, the device comprising:
a substrate;
a first conductive electrode overlying the substrate;
a photovoltaic device having a first electrical interface connected to the first, electrode, and a second electrical interface;
a second conductive electrode overlying the photovoltaic device connected to the second electrical interface; and,
an array of neural interface single-crystal IrOx nanostructures overlying the second electrode, where x≦4.
2. The device of claim 1 wherein the array of IrOx nanostructures includes IrOx nanostructures having an average aspect ratio in a range of about 1:1 to about 1:1000.
3. The device of claim 1 wherein the first electrode is made from a transparent material selected from a group consisting of ITO, ZnO, a thin metal layer, SnO 2 :F, and carbon nanotubes.
4. The device of claim 3 wherein the second electrode is a material selected from a group consisting of doped silicon (Si), Al, Mo, Ag, TiN, TaN, Pt, Ir, Pd, Ru, and Au.
5. The device of claim 1 wherein the second electrode is made from a transparent material selected from a group consisting of ITO, ZnO, a thin metal layer, SnO 2 :F, and carbon nanotubes.
6. The device of claim 4 wherein the first electrode is a material selected from a group consisting of doped Si, Al, Mo, Ag, TiN, TaN, Pt, Ir, Pd, Ru, and Au.
7. The device of claim 1 wherein each IrOx nanostructures has a proximal end attached to the second electrode, and a distal end; and,
the device further comprising:
an electrical insulator partially coating the IrOx nanostructures, leaving the IrOx distal ends exposed.
8. The device of claim 7 wherein the electrical insulator partially coating the IrOx nanostructures is a material selected from a group consisting of SiO 2 , SiN, TiO 2 , and spin on glass (SOG).
9. The device of claim 1 wherein the IrOx nanostructures has an average height in the range of about 10 nanometers (nm) to about 10 micrometers (μm).
10. The device of claim 1 wherein the IrOx nanostructures have an average proximal end diameter in a range of about 10 nm to about 10 μm,
11. The device of claim 1 further comprising:
a controlled growth buffer layer interposed between the IrOx nanostructures and the second electrode, made from a material selected from a group consisting of LiNbO 3 , LiTaO 3 , and SA.
12. The device of claim 1 wherein the substrate is a material selected from a group consisting of glass, quartz, plastic, and flexible polyimide.