IP Library Granted Patent US 9,813,152
Granted Patent B2
US 9,813,152 · App. 12/241,961 · Granted Nov 7, 2017

Method and system for optoelectronics transceivers integrated on a CMOS chip

Inventors: Thierry Pinguet (Cardiff-by-the-Sea, CA); Steffen Gloeckner (San Diego, CA); Sherif Abdalla (Carlsbad, CA); Sina Mirsaidi (San Diego, CA); Peter De Dobbelaere (San Diego, CA); Lawrence C. Gunn, III (Encinitas, CA)
Assignee: Luxtera, Inc.
H04B10/25G02B6/124G02B6/1228G02B6/43G02B6/4214
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,813,152
App. No.
12/241,961
Granted
Nov 7, 2017
Kind
B2
Abstract

Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Claims (43)

1. A method for processing signals, the method comprising:

in a CMOS chip comprising photonics devices and electronics devices that were fabricated using a CMOS process,

receiving optical signals from one or more optical fibers via optical couplers on a top surface of said CMOS chip;

converting said optical signals to electrical signals via one or more photodetectors integrated in said CMOS chip;

processing said electrical signals using circuitry in said CMOS chip;

receiving a continuous-wave (CW) optical signal from a laser source via optical couplers on said top surface of said CMOS chip;

modulating said received CW optical signal using one or more optical modulators integrated in said CMOS chip;

receiving electrical signals from circuitry in said CMOS chip;

driving said one or more optical modulators using said received electrical signals; and

communicating said modulated optical signal out of said top surface of said CMOS chip into one or more optical fibers via one or more optical couplers integrated in said CMOS chip.

2. The method according to claim 1 , comprising modulating said received CW optical signal using Mach-Zehnder modulators.

3. The method according to claim 1 , comprising modulating said received CW optical signal using ring modulators.

4. The method according to claim 1 , wherein said CMOS chip comprises a CMOS guard ring.

5. The method according to claim 1 , comprising communicating said received optical signals between devices on said CMOS chip via waveguides.

6. The method according to claim 1 , wherein said one or more photodetectors comprise germanium waveguide photodiodes.

7. The method according to claim 1 , wherein said wherein said one or more photodetectors comprise germanium waveguide avalanche photodiodes.

8. The method according to claim 1 , wherein said wherein said one or more photodetectors comprise heterojunction diodes.

9. The method according to claim 1 , comprising generating said CW optical signal using an edge-emitting semiconductor laser.

10. The method according to claim 1 , comprising generating said CW optical signal using a vertical-cavity surface emitting semiconductor laser.

11. The method according to claim 1 , wherein said laser source is bonded to said top surface of said CMOS chip.

12. A system for processing signals, the system comprising:

a CMOS chip comprising photonics devices and electronics devices that were fabricated in a CMOS process, wherein said CMOS chip comprises:

one or more optical couplers on a top surface of said CMOS chip and enabled to receive optical signals from one or more optical fibers;

one or more photodetectors integrated in said CMOS chip and enabled to convert said received optical signals to electrical signals;

one or more circuits integrated in said CMOS chip and enabled to process said electrical signals;

one or more optical couplers on said top surface of said CMOS chip and enabled to receive a continuous-wave (CW) optical signal from a laser source;

one or more optical modulators integrated in said CMOS chip and enabled to modulate said received CW optical signal;

one or more circuits integrated in said CMOS chip and enabled to receive electrical signals and drive said one or more optical modulators using said received electrical signals; and

one or more optical couplers integrated in said CMOS chip and enabled to communicate said modulated optical signal out of said top surface of said CMOS chip into one or more optical fibers.

13. The system according to claim 12 , wherein said optical modulators comprise Mach-Zehnder modulators.

14. The system according to claim 12 , wherein said optical modulators comprise ring modulators.

15. The system according to claim 12 , wherein said CMOS chip comprises a CMOS guard ring.

16. The system according to claim 12 , wherein said received optical signals are communicated between devices on said CMOS chip using waveguides.

17. The system according to claim 12 , wherein said one or more photodetectors comprise germanium waveguide photodiodes.

18. The system according to claim 12 , wherein said wherein said one or more photodetectors comprise germanium waveguide avalanche photodiodes.

19. The system according to claim 12 , wherein said wherein said one or more photodetectors comprise heterojunction diodes.

20. The system according to claim 12 , wherein said laser source is an edge-emitting semiconductor laser.

21. The system according to claim 12 , wherein said laser source is a vertical-cavity surface emitting semiconductor laser.

22. The system according to claim 12 , wherein said laser source is bonded to said top surface of said CMOS chip.

23. The method according to claim 1 , wherein said photonics devices that were fabricated in a CMOS process comprise said one or more optical couplers, said one or more photodetectors, and said one or more optical modulators.

24. The method according to claim 1 , wherein said one or more optical couplers comprise grating couplers.

25. The system according to claim 12 , wherein said photonics devices that were fabricated in a CMOS process comprise said one or more optical couplers, said one or more photodetectors, and said one or more optical modulators.

26. The system according to claim 12 , wherein said one or more optical couplers comprise grating couplers.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE THE ASSIGNOR'S NAME PREVIOUSLY RECORDED AT REEL: 058979 FRAME: 0027. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 24, 2022
From: LUXTERA LLC
To: CISCO TECHNOLOGY, INC.
Reel/Frame 059496/0803 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2022
From: CISCO SYSTEMS, INC.
To: CISCO TECHNOLOGY, INC.
Reel/Frame 058979/0027 →
RELEASE OF SECURITY INTEREST Recorded Dec 24, 2020
From: SILICON VALLEY BANK
To: LUXTERA, LLC
Reel/Frame 054855/0838 →
CHANGE OF NAME Recorded Feb 6, 2020
From: LUXTERA, INC.
To: LUXTERA LLC
Reel/Frame 052019/0811 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2018
From: GUNN, LAWRENCE C., III
To: LUXTERA, INC.
Reel/Frame 047667/0480 →
SECURITY INTEREST Recorded Mar 29, 2017
From: LUXTERA, INC.
To: SILICON VALLEY BANK
Reel/Frame 042109/0140 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2012
From: PINGUET, THIERRY; GLOECKNER, STEFFEN; ABDALLA, SHERIF; MIRSAIDI, SINA; DE DOBBELAERE, PETER
To: LUXTERA INC.
Reel/Frame 028734/0098 →
SECURITY AGREEMENT Recorded Mar 17, 2010
From: LUXTERA, INC.
To: SILICON VALLEY BANK
Reel/Frame 024091/0191 →
Continuity (10)
Continuation In Part 11611084 · Dec 14, 2006
Continuation In Part 10758561 · Jan 14, 2004
Continuation In Part 10799040 · Mar 11, 2004
Continuation In Part 10917204 · Aug 11, 2004
Continuation In Part 11384019 · Mar 17, 2006
Provisional Application 61057127 · May 29, 2008
Provisional Application 60997298 · Oct 2, 2007
Provisional Application 60750488 · Dec 14, 2005
Related Publication 20090022500A1 · Jan 22, 2009
Related Publication 20130094865A9 · Apr 18, 2013