Process and apparatus for producing a single crystal of semiconductor material
View Patent ↗A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.
1. A process for producing a single crystal of semiconductor material, comprising:
maintaining a melt of semiconductor material in a liquid state by pulling coil;
growing a single crystal on a seed crystal by solidifying fractions of the melt;
inductively heating and melting granules in a vessel, the vessel comprising a plate of silicon having a tubular opening in the center;
cooling the plate of silicon in order to prevent melting a lower side of the plate by the pulling coil;
feeding the melting granules to the melt; and
delaying the feed of the melting granules to the melt.
2. The process as claimed in claim 1 , comprising:
passing the melting granules through a system of passages to the melt.
3. The process as claimed in claim 1 , comprising:
passing the melting granules through a meandering system of passages to the melt.
4. The process as claimed in claim 1 wherein the melting granules travel a distance of at least 25 mm beore reaching the melt.
5. The process as claimed in claim 1 , comprising:
effecting the melting of the granules and maintaining of the melt in the liquid state by an inductive energy supply; and
wherein the two operations are inductively decoupled.
6. The process as claimed in claim 1 , comprising:
melting the granules in an outer region of the vessel; and
passing said granules to a central opening in the vessel and, from there to the melt.
7. The process as claimed in claim 1 , comprising:
feeding the melting granules to a coolable plate of semiconductor material; and
supplying the molten granules through a hole in the plate to the melt, wherein the molten granules forming a melt neck which completely closes off the hole of the plate.
8. The process as claimed in claim 1 , comprising:
additionally delaying the feed of the melting granules to the melt by providing at least one barrier which granules which have not yet completely melted are unable to overcome.
9. The process as claimed in claim 1 , comprising:
feeding the melting granules tot he melt such that contact between molten material and quartz parts is completely avoided.
10. The process as claimed in claim 1 , comprising:
passing the melting granules though a meandering system of passages to the melt.
11. The process as claimed in claim 1 , wherein the vessel is a coolable plate of semiconductor material and further comprising:
feeding the melting granules to a coolable plate of semiconductor material; and
supplying the molten granules through a hole in the plate to the melt, wherein the molten granules forming a melt neck which completely closes off the hole of the plate.
12. The process as claimed in claim 1 further comprising:
heating the melt through a central opening in the vessel.
13. A process for producing a single crystal of semiconductor material, comprising:
maintaining a melt of semiconductor material in a liquid state by a pulling coil;
growing a single crystal on a seed crystal by solidifying fractions of the melt;
inductively heating and melting granules in a vessel by a melting coil arranged in a position above the vessel comprising a plate of silicon having a tubular opening in the center;
cooling the plate of silicon in order to prevent melting a lower side of the plate by the pulling coil;
feeding the melting granules to the melt; and
delaying the feed of the melting granules to the melt such that substantially completely melted granules are fed to the melt.