Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide
View Patent ↗Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm 2 O 3 and Yb 2 O 3 , wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.
1. An indium tin oxide target including Sm 2 O 3 and Yb 2 O 3 ,
wherein an amount of the Sm 2 O 3 and Yb 2 O 3 is about 0.5 wt. % to about 10 wt. % based on the weight of the target,
wherein [Sm]/([In]+[Sm]) is about 0.005 to about 0.18, and [Yb]/([In]+[Yb]) is about 0.005 to about 0.18, and
wherein [Sm] is a number of samarium atoms per unit mass of the target, [Yb] is a number of ytterbium atoms per unit mass of the target, and [In] is a number of indium atoms per unit mass of the target.
2. The indium tin oxide target of claim 1 , wherein a Direct Current (DC) sputtering is applied to the indium tin oxide target.
3. The indium tin oxide target of claim 1 , wherein a density of the indium tin oxide target is about 7.10 g/cc to about 7.18 g/cc.
4. The indium tin oxide target of claim 1 , wherein a relative density of the indium tin oxide target is about 95% or more.
5. The indium tin oxide target of claim 1 , wherein a bulk resistance of the indium tin oxide target is about 250 μΩ·cm or less.