Method for sequentially writing data with an offset to a non-volatile memory
View Patent ↗An operation method of a memory includes the steps of calculating an offset of sequential write commands and the beginning of pages of a block of a non-volatile memory; shifting the block by the offset; and directly writing data from a host to the pages except the first and last pages of the block by the sequential write commands. In an embodiment, the pages are logical pages providing optimal writing efficiency and are determined before calculating the offset. The step of shifting the block by the offset is to increase corresponding logical block addresses (LBA) in the pages by the offset.
1. An operation method of a memory, comprising the steps of:
Calculating a logical block address (LBA) offset between a start logical block address of a sequential write command and a beginning logical block address of a logical page of a logical block of a non-volatile memory, the logical block including a first logical page, a last logical page and at least one logical page between the first logical page and the last logical page;
shifting the logical block by the LBA offset; and
directly writing data from a host to the first logical page and the at least one logical page of the logical block except the last logical page of the logical block by the sequential write command.
2. The operation method of claim 1 , further comprising a step of determining the logical page before calculating the LBA offset.
3. The operation method of claim 1 , wherein the LBA offset is a value in a range from 0 to a pagesize of the logical page.
4. The operation method of claim 3 , wherein the logical page of the logical block is the first logical page of the logical block.
5. The operation method of claim 1 , wherein data from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the logical block is temporarily stored in a device.
6. The operation method of claim 5 , wherein the device is a volatile memory, an area of the non-volatile memory or an electronic storage device.
7. The operation method of claim 5 , wherein the data stored from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the block temporarily stored in the device is written to the last logical page of the logical block.
8. The operation method of claim 5 , wherein the last write command of the sequential write command is divided into a first sub-command and a second sub-command.
9. The operation method of claim 8 , wherein the first sub-command combining the data stored from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the logical block and the data to be written to the last logical page of the logical block is written to the last logical page of the logical block.
10. The operation method of claim 8 , wherein the second sub-command is written to another logical block.
11. The operation method of claim 1 , wherein the step of shifting the logical block by the LBA offset is to increase corresponding logical block addresses in the logical pages by the LBA offset.
12. The operation method of claim 1 , wherein the LBA offset is stored in a device for being read.
13. The operation method of claim 12 , wherein the device is a volatile memory, an area of the non-volatile memory or an electronic storage device.
14. The operation method of claim 1 , further comprising a step of reading the logical block with reference to the LBA offset after writing data by the sequential write command.
15. An operation method of a memory, comprising the steps of:
calculating a logical block address (LBA) offset between a start logical block address of a sequential write command and a beginning logical block address of a logical page of a logical block of a non-volatile memory, the logical block including a first logical page, a last logical page and at least one logical page between the first logical page and the last logical page;
shifting the logical block by the LBA offset; and
directly writing data from a host to the first logical page and the at least one logical page of the logical block except the last logical page of the logical block by the sequential write command,
wherein data from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the logical block is temporarily stored in a device, and
wherein the data stored from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the block temporarily stored in the device is written to the last logical page of the logical block.
16. An operation method of a memory, comprising the steps of:
calculating a logical block address (LBA) offset between a start logical block address of a sequential write command and a beginning logical block address of a logical page of a logical block of a non-volatile memory, the logical block including a first logical page, a last logical page and at least one logical page between the first logical page and the last logical page;
shifting the logical block by the LBA offset; and
directly writing data from a host to the first logical page and the at least one logical page of the logical block except the last logical page of the logical block by the sequential write command,
wherein data from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the logical block is temporarily stored in a device,
wherein the last write command of the sequential write command is divided into a first sub-command and a second sub-command, and
wherein the first sub-command combining the data stored from the beginning logical block address of the logical page of the logical block to the LBA offset of the logical page of the logical block and the data to be written to the last logical page of the logical block is written to the last logical page of the logical block.