IP Library Granted Patent US 8,986,408
Granted Patent B1
US 8,986,408 · App. 12/245,573 · Granted Mar 24, 2015

Methods of fabricating polycrystalline diamond products using a selected amount of graphite particles

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Quick Facts
Patent No.
US 8,986,408
App. No.
12/245,573
Granted
Mar 24, 2015
Kind
B1
Abstract

Embodiments of the invention relate to polycrystalline diamond (“PCD”) fabricated by sintering a mixture including diamond particles and a selected amount of graphite particles, polycrystalline diamond compacts (“PDCs”) having a PCD table comprising such PCD, and methods of fabricating such PCD and PDCs. In an embodiment, a method includes providing a mixture including graphite particles present in an amount of about 0.1 weight percent (“wt %”) to about 20 wt % and diamond particles. The method further includes subjecting the mixture to a high-pressure/high-temperature process sufficient to form PCD.

Claims (34)

1. A method, comprising:

providing a first portion adjacent to at least a second portion, the first portion including graphite particles present in a first amount mixed with diamond particles, and the at least a second portion including additional diamond particles mixed with additional graphite particles present in a second amount greater than the first amount; and

subjecting the first portion and the at least a second portion to a high-pressure/high-temperature process in the presence of a catalyst to form polycrystalline diamond, wherein the polycrystalline diamond so formed includes a matrix of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the catalyst being disposed in at least some of the plurality of interstitial regions.

2. The method of claim 1 , further comprising selecting the first amount or the second amount to be about 5 weight percent (“wt %”) to about 10 wt %.

3. The method of claim 1 , further comprising selecting the first amount or the second amount to be about 1 weight percent (“wt %”) to about 9 wt %.

4. The method of claim 1 , further comprising selecting the first amount or the second amount to be about 3 weight percent (“wt %”) to about 6 wt %.

5. The method of claim 1 , further comprising selecting the first amount or the second amount to be about 4.5 weight percent (“wt %”) to about 5.5 wt %.

6. The method of claim 1 wherein the polycrystalline diamond comprises about less than 0.1 weight percent (“wt %”) of graphite that was not converted to diamond during the act of subjecting the first portion and the at least a second portion to a high-pressure/high-temperature process.

7. The method of claim 1 , further comprising infiltrating a metal-solvent catalyst into the first portion and the at least a second portion that catalyzes formation of the polycrystalline diamond.

8. The method of claim 1 wherein the polycrystalline diamond comprises metal-solvent catalyst dispersed therethrough, and further wherein the polycrystalline diamond exhibits a thermal stability at least about equal to leached polycrystalline diamond that has been depleted of metal-solvent catalyst to a depth of about 70 μm to about 90 μm.

9. The method of claim 1 wherein the graphite particles comprise crystalline graphite particles.

10. The method of claim 1 wherein subjecting the first portion and the at least a second portion to a high-pressure/high-temperature process to form polycrystalline diamond comprises subjecting the first portion and the at least a second portion to a temperature of at least about 1100° Celsius and a pressure of at least about 40 kilobar.

11. The method of claim 1 :

further comprising, prior to subjecting the first portion and the at least a second portion to a high-pressure/high-temperature process to form polycrystalline diamond, assembling the first portion and the at least a second portion with a substrate; and

wherein subjecting the first portion and the at least a second portion to a high-pressure/high-temperature process to form polycrystalline diamond comprises integrally forming the polycrystalline diamond as a table bonded to the substrate.

12. A method of fabricating a polycrystalline diamond product, comprising:

placing a first portion between a substrate including a metal-solvent catalyst therein and at least a second portion to form an assembly, wherein the first portion includes graphite particles present in an amount of about 5 weight percent (“wt %”) to about 10 wt % and mixed with diamond particles, and wherein the at least a second portion includes additional diamond particles mixed with additional graphite particles present in another amount less than the amount; and

subjecting the assembly and the substrate to a high-pressure/high-temperature process to infiltrate the first portion and the at least a second portion with a portion of the metal-solvent catalyst from the substrate so that a polycrystalline diamond table forms and bonds to the substrate, wherein the polycrystalline diamond table so formed includes a matrix of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the portion of the metal-solvent catalyst being disposed in at least some of the plurality of interstitial regions.

13. The method of claim 12 , further comprising selecting the amount or the additional amount to be about 5 weight percent (“wt %”) to about 9 wt %.

14. The method of claim 12 , further comprising selecting the amount or the additional amount to be about 5 weight percent (“wt %”) to about 6 wt %.

15. The method of claim 12 , further comprising selecting the amount or the additional amount to be about 5 weight percent (“wt %”) to about 5.5 wt %.

16. The method of claim 12 wherein the polycrystalline diamond table comprises about less than 0.1 weight percent (“wt %”) of graphite that was not converted to diamond during the act of subjecting the first portion and the at least a second portion and the substrate to a high-pressure/high-temperature process.

17. The method of claim 12 wherein the substrate comprises a cemented carbide material.

18. A method of fabricating a polycrystalline diamond product, comprising:

placing a first layer between a substrate including a metal-solvent catalyst therein and at least a second layer to form an assembly, wherein the first layer includes graphite particles present in a first amount mixed with diamond particles, and wherein the at least a second layer includes additional diamond particles mixed with additional graphite particles present in a second amount greater than the first amount; and

subjecting the assembly and the substrate to a high-pressure/high-temperature process to infiltrate the first layer and the at least a second layer with a portion of the metal-solvent catalyst from the substrate so that a polycrystalline diamond table forms and bonds to the substrate, wherein the polycrystalline diamond table so formed includes a matrix of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the portion of the metal-solvent catalyst being disposed in at least some of the plurality of interstitial regions.

19. The method of claim 18 wherein the first amount or the second amount is about 4.5 weight percent (“wt %”) to about 5.5 wt %.

20. The method of claim 18 wherein the graphite particles comprise crystalline graphite particles, amorphous graphite particles, synthetic graphite particles, or combinations thereof.

21. The method of claim 1 wherein the first amount is about 4 to about 5 times greater than the second amount.

22. The method of claim 1 wherein the first amount is about 5 weight percent (“wt %”) to about 25 wt %, and the second amount is about 1 wt % to about 5 wt %.

23. The method of claim 12 wherein the first amount is about 4 to about 5 times greater than the second amount.

24. The method of claim 12 wherein the first amount is about 5 weight percent (“wt %”) to about 25 wt %, and the second amount is about 1 wt % to about 5 wt %.

25. The method of claim 18 wherein the second amount is about 4 to about 5 times greater than the first amount.

26. The method of claim 18 wherein the first amount is about 1 weight percent (“wt %”) to about 5 wt %, and the second amount is about 5 wt % to about 25 wt %.

Assignments (6)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded May 9, 2018
From: APERGY (DELAWARE) FORMATION, INC.; APERGY BMCS ACQUISITION CORP.; APERGY ENERGY AUTOMATION, LLC; HARBISON-FISCHER, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 046117/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2008
From: SANI, MOHAMMAD N.
To: US SYNTHETIC CORPORATION
Reel/Frame 021770/0801 →