IP Library Patent Application 12245638
Patent Application
App. No. 12/245,638

SENSOR DEVICE WITH HEATED NANOSTRUCTURE

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
12/245,638
Abstract

A nanostructure sensing device includes a substrate, a nanotube disposed over the substrate, and at least two conductive elements electrically connected to the nanotube. A electric current on the order of about 10 μA, or greater, is passed through the conductive elements and the nanotube. As a result, the nanotube heats up relative to the substrate. In the alternative, some other method may be used to heat the nanotube. When operated as a sensor with a heated nanotube, the sensor's response and/or recovery time may be markedly improved.

Claims (32)

1 - 6 . (canceled)

7 . A method of sensing an analyte using a nanostructure sensing device, the method comprising:

(a) providing the nanostructure sensing device, said device comprising:

(i) a substrate,

(ii) a nanostructure disposed over the substrate, and

(iii) at least two conductive elements disposed over the substrate and electrically connected to the nanostructure;

(b) exposing the nanostructure to the analyte, wherein at least a part of the nanostructure is at a temperature of at least about 100° C. and the substrate is at a temperature of less than about 100° C. during at least a part of time of said exposure; and

(c) sensing the analyte by measuring a property of the nanostructure.

8 . The method of claim 7 , wherein the nanostructure comprises a nanotube.

9 . The method of claim 7 , wherein the nanostructure comprises a plurality of nanotubes.

10 . The method of claim 7 , wherein at least part of the nanostructure is at a temperature of at least about 200° C. during at least a part of time of said exposure.

11 . The method of claim 7 , wherein at least part of the nanostructure is at a temperature of at least about 300° C. during at least a part of time of said exposure.

12 . The method of claim 7 , wherein the nanostructure is maintained at the temperature of at least about 300° C. during at least a part time of said exposure and wherein exposing the nanostructure to the analyte comprises passing an electrical current of at least about 10 μA through the nanostructure.

13 . The method of claim 7 , wherein the nanostructure is coated or functionalized with an agent that renders the nanostructure sensing device responsive to the analyte.

14 . The method of claim 7 , wherein the nanostructure is coated or functionalized with an agent that renders the nanostructure sensing device responsive to hydrogen gas.

15 . The method of claim 7 , wherein the analyte is hydrogen.

16 . The method of claim 7 , wherein the nanostructure is coated or functionalized with tin oxide.

17 . The method of claim 7 , wherein the nanostructure is coated or functionalized with palladium.

18 . The method of claim 7 , wherein the exposing the nanostructure to the analyte comprises exposing at least a part of the nanostructure to water.

19 . The method of claim 7 , wherein the exposing the nanostructure to the analyte comprises passing an electrical current through the nanostructure.

20 . The method of claim 19 , wherein the electrical current is at least about 10 μA.

21 . A method of recovering a nanostructure sensing device after sensing an analyte, the method comprising:

(a) providing the nanostructure sensing device after sensing the analyte, the nanostructure sensing device comprising:

(i) a substrate,

(ii) a nanostructure disposed over the substrate, and

(iii) at least two conductive elements disposed over the substrate and electrically connected to the nanostructure; and

(b) heating at least a part of the nanostructure, where the heating recovers the nanostructure sensing device.

22 . The method of claim 21 , wherein the heating is performed by passing an electrical current through the nanostructure.

23 . The method of claim 21 , wherein at least a part of the nanostructures reaches at least about 100° C. during the heating.

24 . The method of claim 21 , wherein at least a part of the nanostructures reaches at least about 200° C. during the heating.

25 . The method of claim 21 , wherein the heating recovers the nanostructure sensing device in less than about 10 minutes.

26 . The method of claim 21 , wherein the nanostructure is coated or functionalized with palladium.