Two epitaxial layers to reduce crosstalk in an image sensor
View Patent ↗An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
1. A method for making an image sensor, the method comprising:
forming a first epitaxial layer of a first conductivity type on a substrate of the first conductivity type;
forming a subcollector of a second conductivity type in the first epitaxial layer, wherein the second conductivity type is opposite the first conductivity type;
forming one or more subcollector contact regions of the second conductivity type in the first epitaxial layer, wherein the one or more subcollector contact regions connect to the subcollector;
forming a second epitaxial layer of the first conductivity type on the first epitaxial layer;
when forming the second epitaxial layer on the first epitaxial layer, diffusing one or more dopants in the subcollector and in the one or more subcollector contact regions, wherein the dopants in the one or more subcollector contact regions diffuse at a faster rate than the one or more dopants in the subcollector so that a portion of each subcollector contact region diffuses into the second epitaxial layer; and
forming contact regions of the second conductivity type in the second epitaxial laver, wherein each contact region connects to the portion of a respective subcollector contact region that diffused into the second epitaxial layer.
2. The method of claim 1 , further comprising:
prior to forming the subcollector in the first epitaxial layer, forming an oxide layer on the surface of the first epitaxial layer; and
prior to forming the second epitaxial layer on the first epitaxial layer, removing the oxide layer from the surface of the first epitaxial layer.
3. The method of claim 2 , wherein forming the subcollector in the first epitaxial layer comprises implanting one or more dopants of the second conductivity type into the first epitaxial layer to form the subcollector.
4. The method of claim 3 , wherein forming one or more subcollector contact regions of the second conductivity type in the first epitaxial layer comprises implanting one or more dopants of the second conductivity type into the first epitaxial layer to form the one or more subcollector contact regions.
5. The method of claim 4 , wherein the one or more dopants of the second conductivity type comprise one or more dopants having an n-type conductivity.
6. The method of claim 5 , wherein the one or more dopants comprise one of arsenic and antimony.
7. The method of claim 1 , further comprising forming a plurality of photosensitive sites of the second conductivity type in the second epitaxial layer.
8. A method for making an image sensor, the method comprising:
forming a first epitaxial layer of a first conductivity type on a substrate of the first conductivity type;
forming a subcollector of a second conductivity type in the first epitaxial layer, wherein the second conductivity type is opposite the first conductivity type;
forming one or more subcollector contact regions of the second conductivity type in the first epitaxial layer, wherein the one or more subcollector contact regions connect to the subcollector; and
forming one or more contacts through the substrate that connect to respective subcollector contact regions.
9. The method of claim 8 , further comprising
forming a second epitaxial layer of the first conductivity type on the first epitaxial layer.
10. The method of claim 9 , further comprising:
prior to forming the subcollector in the first epitaxial layer, forming an oxide layer on the surface of the first epitaxial layer; and
prior to forming the second epitaxial layer on the first epitaxial layer, removing the oxide layer from the surface of the first epitaxial layer.
11. The method of claim 10 , wherein forming the subcollector in the first epitaxial layer comprises implanting one or more dopants of the second conductivity type into the first epitaxial layer to form the subcollector.
12. The method of claim 11 , wherein forming one or more subcollector contact regions of the second conductivity type in the first epitaxial layer comprises implanting one or more dopants of the second conductivity type into the first epitaxial layer to form the one or more subcollector contact regions.
13. The method of claim 12 , wherein the one or more dopants of the second conductivity type comprise one or more dopants having an n-type conductivity.
14. The method of claim 13 , wherein the one or more dopants comprise one of arsenic and antimony.
15. The method of claim 8 , further comprising forming a plurality of photosensitive sites of the second conductivity type in the second epitaxial layer.