IP Library Granted Patent US 8,715,884
Granted Patent B2
US 8,715,884 · App. 12/249,699 · Granted May 6, 2014

Fuel cell and process for manufacturing a fuel cell

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Quick Facts
Patent No.
US 8,715,884
App. No.
12/249,699
Granted
May 6, 2014
Kind
B2
Abstract

The present invention pertains to a fuel cell with a storage unit ( 4 ) for storing hydrogen (H x ), with a proton conductive layer, which covers a surface of the storage unit ( 4 ), and with a cathode ( 7 ) on a side of the proton conductive layer, which side is located opposite, wherein the storage unit ( 4 ) is directly coupled with an anode and/or the storage unit ( 4 ) is incorporated in a substrate ( 1 ) of a semiconductor. The storage unit ( 4 ) is preferably connected to the substrate ( 1 ) at least via a stress compensation layer ( 3 ).

Claims (41)

1. A fuel cell, comprising:

a semiconductor substrate;

a recess formed by a recess base surface and a recess sidewall surface in a top surface of said semiconductor substrate said recess forming a storage unit functioning as an anode and containing palladium and hydrogen;

a stress compensation layer covering the recess base surface and the recess side wall surface, the stress compensation layer formed of a ductile material to compensate for mechanical stress on the semiconductor substrate during loading and unloading of hydrogen in the storage unit;

a proton conductive layer that is deposited on the top surface and covers the recess to form a chamber comprising the palladium and hydrogen; and

a cathode on an exterior side of the proton conductive layer.

2. The fuel cell of claim 1 , further comprising a diffusion barrier layer disposed between the stress compensation layer and the semiconductive substrate.

3. The fuel cell of claim 2 , where said diffusion barrier is formed from at least one of silicon nitride, silica and an oxynitride layer.

4. The fuel cell of claim 1 , where the ductile material comprises tin, gold, silver, lead, cadmium or indium.

5. The fuel cell according to claim 1 , wherein the cathode completely covers an upper surface of the proton conductive layer.

6. The fuel cell according to claim 1 , wherein the cathode extends from an upper surface of the proton conductive layer to the top surface of the substrate.

7. The fuel cell according to claim 1 , wherein the cathode extends over a portion of the top surface of the substrate to form a connection contact point.

8. The fuel cell according to claim 1 , wherein the cathode completely covers the proton conductive layer.

9. The fuel cell according to claim 1 , wherein the storage unit and the stress compensation layer each have a surface that ends flat with a surface of the substrate.

10. The fuel cell according to claim 9 , wherein the proton conductive layer covers the surface of the storage unit and the stress compensation layer.

11. The fuel cell according to claim 1 , further comprising an anode contact that extends along a top surface of the semiconductor substrate from a top edge of the anode and the stress compensation layer towards a side of the semiconductor substrate and past the chamber.

12. The fuel cell according to claim 1 , further comprising an anode contact extending from a top side edge of the storage unit via a top side edge of the stress compensation layer to a surface of the semiconductor substrate.

13. A process for manufacturing a fuel cell, comprising;

forming a recess in a top surface of a substrate comprising silicon where the recess is bounded by a recess base surface and a recess sidewall surface;

covering the recess base surface and the recess sidewall surface with a diffusion barrier layer;

providing palladium containing hydrogen in the recess whereby said recess provides a storage unit functioning as an anode;

forming a stress compensation layer that covers the diffusion barrier layer, the stress compensation layer on the recess base surface and recess sidewall surface being formed of a ductile material to compensate for mechanical stress on the substrate during loading and unloading of hydrogen in the storage unit;

providing a proton conductive layer on the top surface that covers the storage unit to form a chamber that comprises the palladium and hydrogen;

forming a cathode on an exterior surface of the proton conductive layer, where the cathode is oxygen permeable; and

providing an anode contact that extends along a top surface of the semiconductor substrate from a top edge of the recess sidewall surface and the stress compensation layer towards a side of the semiconductor substrate and past the chamber.

14. The process according to claim 13 , wherein the cathode extends from an upper surface of the proton conductive layer to the top surface of the substrate.

15. A fuel cell, comprising:

a semiconductor substrate that includes a top surface having a recess therein formed by a recess base surface and a recess sidewall surface, said recess containing palladium and hydrogen;

a stress compensation layer covering the recess base surface and the recess side wall surface, the stress compensation layer being formed of a ductile material to compensate for mechanical stress on the semiconductor substrate during loading and unloading of hydrogen in the recess;

a proton conductive layer that is deposited on the top surface and covers the recess to form a chamber that comprises the palladium and hydrogen; and

an anode contact that extends along a top surface of the semiconductor substrate from a top edge of the recess sidewall surface and the stress compensation layer towards a side of the semiconductor substrate and past the chamber.

16. The fuel cell of claim 15 , further comprising a diffusion barrier layer underlying the palladium and the hydrogen and disposed between the stress compensation layer and the semiconductive substrate.

17. The fuel cell according to claim 15 , further comprising a cathode that extends from an upper surface of the proton conductive layer to the top surface of the substrate.

18. A fuel cell, comprising:

a storage unit for storing hydrogen;

a proton conductive layer that covers a surface of the storage unit;

a cathode arranged on a side of the proton conductive layer, which said side is located opposite the storage unit;

an anode, the storage unit being directly coupled with the anode, wherein the storage unit is incorporated in or on a substrate of a semiconductor, the storage unit being embedded in a recess within a substrate formed of silicon the recess having a base surface and sidewall surfaces;

a stress compensation layer formed on recess base and sidewall surfaces and between adjacent surfaces of the storage unit and the substrate, the stress compensation layer being formed of a ductile material to compensate for mechanical stress on the semiconductor substrate during loading and unloading of hydrogen in the storage unit; and

an anode contact extending along a top surface of the substrate from a top edge of the anode and the stress compensation layer towards a side of the substrate and past the proton conductive layer.

19. The fuel cell according to claim 18 , wherein the cathode extends from an upper surface of the proton conductive layer to a top surface of the substrate.

Assignments (2)
CHANGE OF NAME Recorded Mar 7, 2017
From: MICRONAS GMBH
To: TDK-MICRONAS GMBH
Reel/Frame 041901/0191 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2009
From: LEHMANN, MIRKO; MULLER, CLAAS; REINECKE, HOLGER; FRANK, MIRKO; ERDLER, GILBERT
To: MICRONAS GMBH
Reel/Frame 023227/0226 →