Method of fabricating halftone phase shift mask
View Patent ↗A method of fabricating a halftone phase shift mask is disclosed, by which a process time and a failure ratio can be reduced by sequentially forming a phase shift layer a first photoresist, a metal layer and a second photoresist over a transparent substrate, performing a process to expose a portion of the metal layer, and then performing an etching process to expose a portion of the substrate using the second photoresist as a mask, and then performing an electron-beam exposure process on a portion of the first photoresist such that electrons contact the surface of the transparent substrate, and then simultaneously developing a portion of the first photoresist and removing a portion of the metal layer and a remaining portion of the first photoresist to expose a portion of the phase shift layer.
1. A method of fabricating a halftone phase shift mask comprising:
sequentially forming a phase shift layer, a first photoresist, a chromium layer and a second photoresist over a transparent substrate; and then
partially etching the phase shift layer, the first photoresist and the chromium layer to expose a portion of the transparent substrate; and then
performing exposure on a portion of the first photoresist by electron-beam exposure; and then
simultaneously developing the first photoresist and removing the chromium layer to expose a portion of the phase shift layer.
2. The method of claim 1 , wherein the electron-beam has an electron acceleration voltage in a range between approximately 20 to 100KeV.
3. The method of claim 1 , wherein the first photoresist is formed having a thickness in a range between approximately 1,000 to 5,000Å.
4. The method of claim 1 , wherein the phase shift layer comprises a Mo-silicide nitride layer.
5. The method of claim 1 , further comprising, after sequentially forming the phase shift layer, the first photoresist, the Cr-layer and the second photoresist, performing exposure and development on the second photoresist to expose a portion of the Cr-layer.
6. The method of claim 1 , wherein performing exposure on a portion of the first photoresist comprises transmitting electrons to the transparent substrate.
7. A method of fabricating a halftone phase shift mask comprising:
forming a phase shift layer over a substrate; and then
forming a first photoresist over the phase shift layer; and then
forming a metal layer over the first photoresist; and then
forming a second photoresist over the metal layer and then performing a process to expose a portion of the metal layer; and then
performing an etching process to expose a portion of the substrate using the second photoresist as a mask and then removing the second photoresist after exposing the portion of the substrate; and then
performing an exposure process on a portion of the first photoresist such that electrons contact the surface of the substrate; and then
simultaneously developing a portion of the first photoresist and removing a portion of the metal layer and a remaining portion of the first photoresist to expose a portion of the phase shift layer,
wherein the metal layer is composed of chromium (Cr).
8. The method of claim 7 , wherein the phase shift layer is composed of Mo-silicide nitride.
9. The method of claim 7 , wherein the substrate has transparency.
10. The method of claim 9 , wherein the substrate is composed of quartz.
11. The method of claim 7 , wherein the first photoresist has a thickness in a range between approximately 1,000 to 5,000Å.
12. The method of claim 7 , wherein performing an exposure process on the portion of the first photoresist comprises performing an electron-beam exposure process on the first photoresist.
13. The method of claim 12 , wherein the electron-beam exposure process may be performed using an electron acceleration voltage in a range between approximately 20 to 100KeV.
14. A method of fabricating a halftone phase shift mask comprising:
sequentially forming a phase shift layer, a first photoresist, a metal layer and a second photoresist over a substrate having transparency; and then
exposing a portion of the uppermost surface of the metal layer; and then
exposing a portion of the uppermost surface of the substrate using the second photoresist as a mask; and then
treating the substrate with electrons; and then
exposing a portion of the uppermost surface of the phase shift layer,
wherein the metal layer is composed of chromium (Cr).
15. The method of claim 14 , wherein the phase shift layer is composed of Mo-silicide nitride
16. The method of claim 14 , wherein the substrate is composed of quartz.
17. The method of claim 14 , further comprising, after exposing the portion of the uppermost surface of the substrate and before treating the substrate with electrons:
removing the second photoresist.
18. The method of claim 14 , wherein treating the substrate with electrons comprises performing an electron-beam exposure process on the first photoresist such that electrons contact the surface of the substrate.