ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD
An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.
1 . An electric field head comprising:
a body portion; and
a read head comprising a channel layer which is provided on an air bearing surface (ABS) of the body portion which faces a recording medium, a source which contacts a first end of the channel layer, and a drain which contacts a second end of the channel layer.
2 . The electric field head of claim 1 , further comprising a write head which is provided on a surface of the body portion that is perpendicular to the ABS of the body portion.
3 . The electric field head of claim 1 , wherein the channel layer comprises one of carbon nanotube, graphene, and semiconductor nanowire.
4 . The electric field head of claim 1 , wherein the source and the drain extend from the ABS of the body portion to a surface of the body portion that is perpendicular to the ABS.
5 . The electric field head of claim 1 , wherein the source and the drain are a metal region or a doping region.
6 . The electric field head of claim 1 , wherein the source and the drain are a metal layer provided on the ABS of the body portion.
7 . The electric field head of claim 1 , wherein the source and the drain are a metal layer provided in the ABS of the body portion.
8 . A method of manufacturing an electric field head, the method comprising:
defining a head forming portion of a substrate;
separating the head forming portion from other portions of the substrate;
forming an air bearing surface (ABS) pattern on a side surface of the separated head forming portion; and
forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed.
9 . The method of claim 8 , further comprising forming a write head on the head forming portion before the head forming portion is separated from the other portions of the substrate.
10 . The method of claim 8 , wherein the head forming portion comprises a plurality of head forming regions.
11 . The method of claim 8 , wherein the channel layer is formed of one of carbon nanotube, graphene, and semiconductor nanowire.
12 . The method of claim 8 , wherein the read head comprises a source which contacts a first end of the channel layer and a drain contacts a second end of the channel layer.
13 . An information storage device comprising:
a ferroelectric recording medium; and
an electric field head,
wherein the electric field head comprises:
a body portion; and
a read head comprising a channel layer which is provided on an air bearing surface (ABS) of the body portion which faces the ferroelectric recording medium, a source which contacts a first end of the channel layer, and a drain which contacts a second end of the channel layer.
14 . The information storage device of claim 13 , further comprising a write head which is provided on a surface of the body portion that is perpendicular to the ABS of the body portion.
15 . The information storage device of claim 13 , wherein the channel layer comprises one of carbon nanotube, graphene, and semiconductor nanowire.
16 . The information storage device of claim 13 , wherein the source and the drain extend from the ABS of the body portion to a surface of the body portion that is perpendicular to the ABS of the body portion.
17 . The information storage device of claim 13 , wherein the source and the drain are a metal region or a doping region.
18 . The information storage device of claim 13 , wherein the source and the drain are a metal layer provided on the ABS surface.
19 . The information storage device of claim 13 , wherein the source and the drain are a metal layer provided in the ABS surface.
20 . The information storage device of claim 13 , wherein the ferroelectric recording medium is of a rotating disc type and the electric field head pivots by flying over a surface of the ferroelectric recording medium.