Integrated circuits with phase change devices

1. An integrated circuit chip package, comprising:

an integrated circuit die;

a phase change die stacked on the integrated circuit die and having a phase change material with an electrical characteristic that changes with respect to a temperature of the integrated circuit die and that detects when thermal failure is approaching;

an interconnect providing communication into and out of the phase change die, wherein the integrated circuit die is an electronic circuit that includes semiconductor devices and passive components manufactured on a surface of a semiconductor material.

2. The integrated circuit chip package of claim 1 , wherein the phase change material alters from an amorphous state to a crystalline state when the temperature of the integrated circuit exceeds a threshold temperature for a predetermined time period.

3. The integrated circuit chip package of claim 1 , wherein the electrical characteristic is resistivity and the phase change die is a chalcogenide phase change die.

4. The integrated circuit chip package of claim 1 further comprising, a plurality of separate functional areas on the integrated circuit die, wherein two of the functional areas include a different phase change material.

5. The integrated circuit chip package of claim 1 further comprising:

a first functional area on the integrated circuit programmed with ones;

a second functional area on the integrated circuit programmed with zeros.

6. The integrated circuit chip package of claim 1 , wherein an electrical resistivity of the phase change material changes to notify that the integrated circuit die will fail.

7. The integrated circuit chip package of claim 1 , wherein the interconnect transmits a signal to a controller to notify of an upcoming failure based on a thermal history to which the integrated circuit die has been exposed.

8. An integrated circuit chip package, comprising:

an integrated circuit die; and

a phase change die positioned adjacent to the integrated circuit die and having a phase change material that measures when thermally induced failure is approaching by changing phases when a temperature at the integrated circuit die exceeds a threshold for a predetermined amount of time, wherein the integrated circuit die is an electronic circuit that includes semiconductor devices manufactured in a surface of a substrate of a semiconductor material.

9. The integrated circuit chip package of claim 8 , wherein the phase change material is directly mounted on the integrated circuit die.

10. The integrated circuit chip package of claim 8 , wherein the phase change material is externally mounted to the integrated circuit die as a package-on-package.

11. The integrated circuit chip package of claim 8 , wherein a fixed voltage is maintained across the phase change die, and a change in electrical resistance across the phase change die indicates that the temperature at the integrated circuit die exceeded the threshold for the predetermined amount of time.

12. The integrated circuit chip package of claim 8 , wherein the phase change die includes a first area where phase change material changes phases and a second area where phase change material does not change phase.

13. An integrated circuit chip package, comprising:

an integrated circuit die;

a phase change die having a phase change material that measures when thermally induced failure is approaching by changing phases when a temperature at the integrated circuit die exceeds a threshold for a predetermined amount of time;

a second integrated circuit die vertically mounted to the integrated circuit die; and

a second phase change die having a second phase change material that changes phases when a temperature at the second integrated circuit die exceeds a second threshold for a second predetermined amount of time.