InGaAsSbN photodiode arrays
View Patent ↗Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
1. A photodiode apparatus, comprising:
an indium phosphide substrate;
a first layer region coupled to the indium phosphide, the first layer comprising at least a layer of indium phosphide doped n-type material;
a second layer region, coupled to the first layer region, the second layer region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, the InGaAsSbN layer having a thickness of at least 100 nanometers and being nominally lattice-matched to said substrate;
a third layer region comprising a layer of indium phosphide;
a fourth layer region comprising a patterned p-type layer of indium gallium arsenide; and
a fifth layer region comprising a dopant diffused region which extends from said third layer region into said second layer region.
2. The photodiode apparatus of claim 1 , wherein the second layer region has a cutoff wavelength greater than 1.7 microns.
3. The photodiode apparatus of claim 1 , wherein the thickness of the InGaAsSbN layer is between 0.05 microns and 10 microns.
4. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of antimonide.
5. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of nitrogen.
6. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration greater than 40% of indium.
7. The photodiode apparatus of claim 1 , wherein the indium phosphide substrate is removed.
8. The photodiode apparatus of claim 2 , wherein the cutoff wavelength is measured at 25 degrees celsius.
9. The photodiode apparatus of claim 8 , wherein the cutoff wavelength is less than 5 microns.