IP Library Granted Patent US 7,951,618
Granted Patent B2
US 7,951,618 · App. 12/255,573 · Granted May 31, 2011

Luminescent semi-conductive polymer material, method of preparing the same and organic light emitting element having the same

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Quick Facts
Patent No.
US 7,951,618
App. No.
12/255,573
Granted
May 31, 2011
Kind
B2
Abstract

The present invention is related to a luminescent material generated by polymerization of a pyrromethene complex by glow discharge. The polymer material of the present invention exhibits semi-conductive properties and has a luminescence maximum in a spectrum region in the range of about 540 nm to about 585 nm with a half-width of the luminescence band in the range of about 55 nm to about 75 nm, a quantum yield of photoluminescence in the range of about 0.6 to about 0.8, and an electric conductivity at a temperature of about 20° C. in the range of about 1×10 −10 S/cm to about 5×10 −10 S/cm. The resultant polymer layer has a thickness in the range of about 0.01 μm to about 10 μm on a substrate placed between or on any of the electrodes. The starting pyrromethene complex may be a 1,3,5,7,8-pentamethyl-2, 6-diethylpyrromethene difluoroborate complex (pyrromethene 567). Additionally, the luminescent polymer material may be formed as a layer on a substrate having conductive coating, such as a metal, a dielectric material or semi-conductive material, for example.

Claims (15)

1. A method for preparing a semi-conductive luminescent material, comprising:

polymerizing vapors of a pyrromethene complex in a glow discharge; and

forming a polymer layer through glow discharge polymerization on a substrate placed between or on any electrodes, wherein the pyrromethene complex is 1,3,5,7,8-pentamethyl-2,6-diethylpyrromethene difluoroborate complex (pyrromethene 567).

2. The method of claim 1 , wherein the glow discharge is performed at a temperature in the range of about 250° C. to about 350° C., a residual pressure in the range of about 10 −1 Pa to about 10 −2 Pa, a discharge power in the range of about 0.5 W to about 3 W for a time period in the range of about 2 minutes to about 120 minutes.

3. The method of claim of 1 , wherein the substrate is a material having a conductive coating and is selected from the group consisting of a metal, a dielectric material, and a semi-conductive material.

4. The method of claim 1 , wherein a light emitting film is fabricated from the semi-conductive luminescence material.

5. A method for preparing a semi-conductive luminescent material, comprising:

polymerizing vapors of a pyrromethene complex using glow discharge to form a polymer layer on a substrate.

6. The method of claim 5 , further comprising;

integrating the polymer layer on the substrate into a liquid crystal display apparatus.

7. The method of claim 5 , wherein the polymerization of the vapors is performed at a residual pressure in the range of about 10 −1 Pa to about 10 −2 Pa.

8. The method of claim 5 , wherein the polymerization of the vapors is performed at a temperature in the range of about 250° C. to about 350° C.

9. The method of claim 5 , wherein the polymerization of the vapors is performed at a glow discharge power in the range of about 0.5 W to about 3 W.

10. The method of claim 5 , wherein polymerization of the vapors is performed at a temperature in the range of about 250° C. to about 350° C., a residual pressure in the range of about 10 −1 Pa to about 10 −2 Pa, a glow discharge power in the range of about 0.5 W to about 3 W for a time period in the range of about 2 minutes to about 120 minutes.

11. The method of claim 5 , wherein the substrate is fused silica.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029007/0934 →