Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask
View Patent ↗A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
1. A thin film transistor comprising:
a source area and a drain area provided on a semiconductor thin film crystallized on a glass base plate;
a gate insulating film provided between said source area and drain area on said semiconductor thin film;
a gate electrode provided on said gate insulating film;
a second insulating film provided on said gate electrode, said source area, and said drain area; and
contact holes provided on said second insulating film and having a conductor layer for electrically contacting at least one of said gate electrode, said source area, and said drain area, wherein a planar shape of the contact holes is in a plane parallel to a major surface of the second insulating film, wherein the planar shape of said contact holes is generally rectangular with long and short sides, and wherein a length dimension of the long sides of the contact holes of planar shape is as long as or longer than 1.4 times a length dimension of the short sides.
2. The thin film resistor of claim 1 , in which the planar shape of the contact holes is in a plane parallel to a major surface of the glass base plate.
3. The thin film resistor of claim 1 , in which the glass base plate has a thickness variation of a minimum of 9 mm/100 mm 2 .
4. An integrated circuit, comprising:
a thin film transistor provided on a semiconductor thin film crystallized on a glass base plate,
wherein a planar shape of the contact holes is in a plane parallel to a major surface of the second insulating film, wherein the planar shape of contact holes of said integrated circuit is generally rectangular with long and short sides, and wherein a length dimension of the long sides of the planar shape of said contact holes is 1.4 times as long as or longer than a length dimension in the direction of the short sides.
5. The integrated circuit of claim 4 , in which the planar shape of the contact holes is in a plane parallel to a major surface of the glass base plate.
6. The integrated circuit of claim 4 , in which the glass base plate has a thickness variation of a minimum of 9 mm/100 mm 2 .
7. A liquid crystal display, comprising:
a thin film transistor constituting a drive circuit for a liquid crystal display cell provided on a semiconductor thin film crystallized on a glass plate,
wherein a planar shape of the contact holes is in a plane parallel to a major surface of the second insulating film, wherein the planar shape of contact holes of said circuit is generally rectangular, and a length dimension of the long sides of the planar shape of said contact holes is 1.4 times as long as or longer than a length dimension of the short sides.
8. The liquid crystal display of claim 7 , in which the planar shape of the contact holes is in a plane parallel to a major surface of the glass plate.
9. The liquid crystal display of claim 7 , in which the glass plate has a thickness variation of a minimum of 9 mm/100 mm 2 .