Ultraviolet sensor
View Patent ↗The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body.
1. An ultraviolet sensor comprising:
a ZnO layer composed of an oxide semiconductor including ZnO;
a (Ni,Zn)O layer in contact with the ZnO layer and composed of an oxide semiconductor including NiO and ZnO solid-solved therein;
a first terminal electrode electrically connected to the ZnO layer; and
a second terminal electrode electrically connected to the (Ni,Zn)O layer,
wherein the ZnO layer is disposed at an ultraviolet ray receiving side of the ultraviolet sensor so as to have an ultraviolet ray receiving surface.
2. The ultraviolet sensor according to claim 1 ,
wherein the ZnO layer contains 0.1 to 3 molar percent of Co.
3. The ultraviolet sensor according to claim 1 ,
wherein when the composition of the (Ni,Zn)O layer is represented by (Ni 1−x Zn x )O, wherein 0.2≦x≦0.4.
4. The ultraviolet sensor according to claim 1 ,
further comprising a conductive layer in contact with the (Ni,Zn)O layer at a side of the (Ni,Zn)O layer opposite to that of the ZnO layer, the conductive layer is located and which includes an electrical conductive ceramic sintered body.
5. The ultraviolet sensor according to claim 4 , wherein the conductive layer is an electrical conductive ceramic sintered body.
6. The ultraviolet sensor according to claim 4 ,
wherein the conductive layer includes a transition metal oxide.
7. The ultraviolet sensor according to claim 6 ,
wherein the transition metal oxide is a perovskite oxide represented by ABO 3 , wherein A is one element selected from the group consisting of a rare earth element, Sr and Ba, or a solid solution containing at least one element selected from the group consisting of a rare earth element, Sr and Ba; and B is one element selected from the group consisting of Mn, Co, and Ni or a solid solution containing at least one element selected from the group consisting of Mn, Co, and Ni.
8. The ultraviolet sensor according to claim 1 , wherein the ZnO layer has a thickness in the range of 1 to 50 μm.
9. The ultraviolet sensor according to claim 1 , wherein the (Ni,Zn)O layer has a thickness of about 5 μm.
10. The ultraviolet sensor according to claim 1 ,
further comprising a substrate layer provided at a side of the (Ni,Zn)O layer opposite to that at which the ZnO layer is located, the substrate layer including a high resistance material.
11. The ultraviolet sensor according to claim 10 ,
wherein the high resistance material is NiO or a material primarily composed of NiO.
12. The ultraviolet sensor according to claim 1 ,
wherein the (Ni,Zn)O layer includes a sintered body.
13. The ultraviolet sensor according to claim 12 ,
wherein the ZnO layer includes a sintered body which is obtained by simultaneous firing with the (Ni,Zn)O layer.
14. The ultraviolet sensor according to claim 1 ,
further comprising a light-transmissive conductive film on the ultraviolet ray receiving surface of the ZnO layer.