Nitride semiconductor light emitting diode
View Patent ↗A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
1. A nitride semiconductor light emitting diode (LED) comprising:
an n-type nitride semiconductor layer;
an active layer formed on the n-type nitride semiconductor layer;
an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor; and
a p-type nitride semiconductor layer formed on the electron emitting layer.
2. A nitride semiconductor light emitting diode (LED) comprising:
a substrate;
an n-type nitride semiconductor layer formed on the substrate;
an active layer formed on a portion of the n-type nitride semiconductor layer;
an electron emitting layer formed on the active layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor;
a p-type nitride semiconductor layer formed on the electron emitting layer;
a p-electrode formed on the p-type nitride semiconductor layer; and
an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
3. A nitride semiconductor light emitting diode (LED) comprising:
a p-electrode;
a p-type nitride semiconductor layer formed on the p-electrode;
an electron emitting layer formed on the p-type nitride semiconductor layer, wherein the electron emitting layer comprises at least a pair of a first nitride semiconductor layer including a transition element of group III and a second nitride semiconductor layer, and wherein the inclusion of the group III transition element increases the bandgap difference between the first nitride semiconductor and the second nitride semiconductor;
an active layer formed on the electron emitting layer;
an n-type nitride semiconductor layer formed on the active layer;
a substrate formed on the n-type nitride semiconductor layer; and
an n-electrode formed on the substrate.
4. The nitride semiconductor LED according to claim 3 ,
wherein the substrate is any one selected from the group consisting of a GaN substrate, an SiC substrate, a ZnO substrate, and a conductive substrate.